Properties of Zn Implanted GaN

Abstract

We report the optical and structural properties of ion implanted GaN:Zn. Post-implant annealing up to 1100 °C was performed under flowing N2 in both a tube furnace and a rapid thermal annealing (RTA) system, with and without SiNx encapsulation layers. The implantation damage is quantified by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) detects significant rearrangement of implanted Zn only at the highest temperatures and doses investigated. Strain reduction, observed in GaN:Zn annealed at or above 975 °C by high-resolution x-ray diffractometry (HRXRD), indicates successful damage removal. The optical activation of annealed GaN:Zn is measured by photoluminescence (PL). The room temperature (RT) Zn acceptor transition at ∼430 nm is consistently observed in annealed GaN:Zn, but at low efficiency. We conclude that residual implantation damage and/or N loss during annealing limits the optical quality of implanted GaN:Zn.

This is a preview of subscription content, access via your institution.

References

  1. 1

    S. Bloom, G. Harbeke, E. Meier and I. B. Ortenburger, Phys. Status Solidi, B66, 161 (1974).

    Article  Google Scholar 

  2. 2

    S. Strite and H. Morkoç, J. Vac. Soc. Technol. B 10, 1237 (1992).

    Google Scholar 

  3. 3

    V. A. Dmitriev, Ya. V. Morozenko, I. V. Popov, A. V. Suvorov, A. L. Syrkin and V. E. Chelnokov, Sov. Tech. Phys. Lett. 12, 221 (1986).

    CAS  Article  Google Scholar 

  4. 4

    J. I. Pankove and J. A. Hutchby, Appl. Phys. Lett. 24, 281 (1974).

    CAS  Article  Google Scholar 

  5. 5

    J. I. Pankove and J. A. Hutchby, J. Appl. Phys. 47, 5387 (1976).

    CAS  Article  Google Scholar 

  6. 6

    R. D. Metcalfe, D. Wickenden and W. C. Clark, J. Luminescence 16, 405 (1978).

  7. 7

    Cree Research, Durham, NC.

    CAS  Article  Google Scholar 

  8. 8

    R. G. Wilson, S. J. Pearton, C. R. Abernathy and J. M. Zavada, Appl. Phys. Lett. 66, 2238 (1995).

  9. 9

    R. G. Wilson, C. B. Vartuli, C. R. Abernathy, S. J. Pearton and J. M. Zavada, Solid-State Electronics 7, 1329(1995).

    Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to S. Strite.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Strite, S., Epperlein, P., Dommann, A. et al. Properties of Zn Implanted GaN. MRS Online Proceedings Library 395, 795–800 (1995). https://doi.org/10.1557/PROC-395-795

Download citation