Abstract
We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.
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E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider and T. Wosinski, J. Appl. Phys. 53, 6140 (1982)
S. Nakamura, M. Senoh, N. Isawa and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
M. P. Ulmer, M. Razeghi and E. Bigan, SPIE Proceedings, Vol. 2397, San Jose, CA, 1995, p.210
H.Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
S. D. Lester, F. A. Ponce, M. G. Crawford and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249(1995).
T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980)
J. I. Pankove and J. A. Hutchby, J. Appl. Phys. 47, 5387 (1976)
R. Singh, R. J. Molnar, M. S. Ünlü and T. D. Moustakas, Appl. Phys. Lett. 64, 336 (1994)
E. R. Glaser, T. A. Kennedy, K. Doverspike, L. B. Rowland, D. K. Gaskill, J. A. Freitas, Jr., M. A. Khan, D. T. Olson and J. N. Kuznia, Phy. Rev. B51, 13326 (1995).
T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski and T. D. Moustakas, Appl. Phys. Lett. 67, 2188 (1995)
D. W. Jenkins, J. D. Dow and M.-H. Tsai, J. Appl. Phys. 72, 4130 (1992).
P. Boguslawski, E. Briggs, T. A. White, M. G. Wensell and J. Bernholc, in Diamond. SiC and Nitride Wide-bandgap Semiconductors, edited by C. H. Carters, Jr., G. Gildenblat, S. Nakamura and R. J. Nemanich, MRS Symposia Proceedings, No. 339 (Material Research Society, Pittsburgh, 1994), p. 693.
J. Neugebauer and C. G. Van de Walle, Phys. Rev. B50, 8067 (1994)
X. Zhang, P. Kung, A. Saxler and M. Razeghi, Invited talk in Physics of Semiconducting Compounds, Jaszowiez, Poland, May 29 – June 2, 1995.
X. Zhang, P. Kung, A.Saxler, D.Walker, T. C. Wang and M. Razeghi, Appl. Phys. Lett. 67, 1745 (1995).
X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler and M. Razeghi, Appl. Phys. Lett. 67, 2028 (1995)
C. Wetzel, D. Wolm, B. K. Meyer, K. Pressel, S. Nilsson, E. N. Mokhov and P. G. Baranov, Appl. Phys. Lett. 65, 1033 (1994).
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Zhang, X., Kung, P., Walker, D. et al. Growth of GaN without Yellow Luminescence. MRS Online Proceedings Library 395, 625–629 (1995). https://doi.org/10.1557/PROC-395-625
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DOI: https://doi.org/10.1557/PROC-395-625