Growth of GaN without Yellow Luminescence

Abstract

We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

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Zhang, X., Kung, P., Walker, D. et al. Growth of GaN without Yellow Luminescence. MRS Online Proceedings Library 395, 625–629 (1995). https://doi.org/10.1557/PROC-395-625

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