Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride

Abstract

A nitrogen vacancy in zinc-blende structure gallium nitride (c-GaN) is investigated by the plane-wave pseudopotential (PWPP) and tight binding-linear combination of muffin tin orbitals (TB-LMTO) methods using 32- and 64- atom supercells. The relaxation of the nearest Ga atom to the vacancy site is found to be inward by 0.069 a.u., with a relaxation energy of 0.04 eV/N-atom vacancy. The shell-projected, total and partial densities of states and the charge density maps are obtained to provide detailed information on energy and spatial localization of the N vacancy states.

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Gubanov, V., Wright, A., Nelson, J. et al. Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride. MRS Online Proceedings Library 395, 509–514 (1995). https://doi.org/10.1557/PROC-395-509

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