Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

Abstract

Excitonic recombination processes in GaN films grown by low pressure metalorganic chemical vapor deposition technique have been studied in the temperature range between 6K to 320K by photoluminescence spectroscopy. Low temperature photoluminescence spectra of high resistivity films show well-resolved spectral features associated with the excitonic interband transitions. A detailed spectral analysis allowed us to estimate the exciton binding energy and the energy gap. Spectral studies of Si-doped GaN films demonstrate that the high energy recombination processes in these films are dominated by excitons bound to neutral Si donors. Comparison between the recombination channels in high resistivity and in Si-doped films indicated that Si has a larger exciton binding energy than the unknown pervasive donor in undoped materials. These results confirm the excellent electronic properties of the undoped and doped films.

This is a preview of subscription content, access via your institution.

References

  1. 1

    Y. C. Chang, D. Z.-Y. Ting, J. Y. Tang and K. Hess, Appl. Phys. Lett. 42, 76 (1983).

  2. 2

    S. Nakamura, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.

  3. 3

    S.C. Binari, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.

    CAS  Article  Google Scholar 

  4. 4

    A.E. Wickenden, L.B. Rowland, K. Doverspike, D.K. Gaskill, J.A. Freitas, Jr., D.S. Simons, and P.H. Chi, J. Electron. Mater., 24, p. 1547 (1995).

    CAS  Article  Google Scholar 

  5. 5

    S.G. Bishop and J.A. Freitas, Jr., J. Cryst. Growth, 106, 38 (1990).

  6. 6

    L.B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D.K. Gaskill, M. Skowronski, and J.A. Freitas, Jr. in Silicon Carbide and Related Materials, edited by M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan, M. Rahman (Inst. Phys. Conf. Ser., 137, 1989) p. 429 – 432.

    CAS  Article  Google Scholar 

  7. 7

    M.A. Khan, D.T. Olson, J. N. Kuznia, W.E. Carlos, and J.A. Freitas, Jr., J. Appl. Phys., 74, 5901 (1993).

    Article  Google Scholar 

  8. 8

    R. Dingle, D.D. Sell, S.E. Stokowski, M. Ilegems, Phys. Rev. B, 58, 1211 (1971).

    Article  Google Scholar 

  9. 9

    H.G. Grimmeis and B. Monemar, J. Appl. Phys., 41, 4054 (1970).

    CAS  Article  Google Scholar 

  10. 10

    E.R. Glaser, T.A. Kennedy, H.C. Crookham, J.A. Freitas, Jr., M.A. Khan, D.T. Olson, and J.N. Kuznia, Appl. Phys. Lett., 63, 2673 (1993).

  11. 11

    K. Doverspike, A.E. Wickenden, S.C. Binari, D.K. Gaskill, J.A. Freitas, Jr., D.S. Simons, and P.H. Chi, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.

    CAS  Article  Google Scholar 

  12. 12

    W. Shan, T.J. Schmidt, X.H. Yang, S.J. Hwang, J.J. Song, and B. Goldenberg, Appl. Phys. Lett., 66, 985 (1995).

    CAS  Article  Google Scholar 

  13. 13

    J. A. Freitas, Jr., S.G. Bishop, P.E.R. Nordquist, and M.L. Gipe, Appl. Phys. Lett., 52, 1695 (1988).

    CAS  Article  Google Scholar 

  14. 14

    J.R. Haynes, Phys. Rev. Lett., 4, 361 (1960).

    Google Scholar 

  15. 15

    J.A. Freitas, Jr., and M.A. Khan in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C.H. Carter, Jr., G. Gildenblat, S. Nakamura, and R.J. Nemanich (Mater. Res. Proc. 339, Pittsburgh, PA 1994), p. 547–552.

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to J.A. Freitas Jr..

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Freitas, J., Doverspike, K. & Wickenden, A. Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates. MRS Online Proceedings Library 395, 485–490 (1995). https://doi.org/10.1557/PROC-395-485

Download citation