Shallow and Deep Level Defects in GaN

Abstract

Shallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

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References

  1. 1

    M.E.Lin, B.N.Sverdlov, M.H.Morkoc, Appl.Phys.Lett. 63, 3625, (1993)

    Article  Google Scholar 

  2. 2

    I. Akasaki, H. Amano, N. Koide, M. Kotaki, K. Manabe, Physica B 185, 428, (1993)

    CAS  Article  Google Scholar 

  3. 3

    S. Nakamura, M. Senoh, N. Iwasa, and S. Nagayama, Jpn. J. Appl. Phys. 34, L797 (1995)

    Article  Google Scholar 

  4. 4

    H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994)

    Google Scholar 

  5. 5

    S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 31, 195, (1992)

    CAS  Article  Google Scholar 

  6. 6

    H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989)

    Article  Google Scholar 

  7. 7

    M. Asif Khan, D.T. Olson, J.N. Kuznia, W.E. Carlos, and J.A. Freitas Jr., J. Appl. Phys. 74, 5901 (1993)

    CAS  Article  Google Scholar 

  8. 8

    P. Hacke, A. Maekawa, N. Koide, K. Hiramatsu, N. Sawaki, Jpn. J. Appl. Phys. 33, 6443 (1994)

    Google Scholar 

  9. 9

    R.J. Molnar and T.D. Moustakas, Bull. Am. Phys. Soc. 38, 445 (1993)

    CAS  Article  Google Scholar 

  10. 10

    S. Nakamura, T. Mukai, M. Senoh, and I. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992)

    CAS  Article  Google Scholar 

  11. 11

    S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992)

    Article  Google Scholar 

  12. 12

    W. Götz, N.M. Johnson, J. Walker, D.P. Bour, H. Amano, and I. Akasaki, Appl. Phys. Lett. 67, 2666 (1995)

  13. 13

    W. Götz, N.M. Johnson, J. Walker, D.P. Bour, and R.A. Street, to be published

    Article  Google Scholar 

  14. 14

    M.S. Brandt, J.W. Ager III, W. Götz, N.M. Johnson, J.S. Harris, R.J. Molnar, and T.D. Moustakas, Phys. Rev. B 49, 14758 (1994)

    CAS  Article  Google Scholar 

  15. 15

    M. Ilegems, R. Dingle, and R.A. Logan, J. Appl. Phys. 43, 3797 (1972)

    CAS  Article  Google Scholar 

  16. 16

    J.I. Pankove and J.A. Hutchby, J. Appl. Phys. 47, 5387 (1976)

    CAS  Article  Google Scholar 

  17. 17

    B. Monemar and O. Lagerstedt, J. Appl. Phys. 50, 6480 (1979)

  18. 18

    W. Götz, N.M. Johnson, R.A. Street, H. Amano, I. Akasaki, H. Liu, C. Kuo, and W. Imler, presented at the Topical Workshop on III-V Nitrides, Nagoya, Japan (1995)

    CAS  Article  Google Scholar 

  19. 19

    T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980)

    CAS  Article  Google Scholar 

  20. 20

    T. Suski, P. Perlin, H. Teisseyre, M. Leszcynski, I. Grzegory, J. Jun, M. Bockowski, and S. Porowski, Appl. Phys. Lett. 67, 2188 (1995)

    Article  Google Scholar 

  21. 21

    E.R. Glaser, T.A. Kennedy, K. Doverspike, L.B. Rowland, D.K. Gaskill, J.A. Freitas, Jr., M. Asif. Khan, D.T. Olson, J.N. Kuznia, and D.K. Wickenden, Phys. Rev. B 51, 13326 (1995)

    CAS  Article  Google Scholar 

  22. 22

    J. Baur, U. Kaufmann, M. Kunzer, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu, Appl. Phys. Lett. 67, 1140 (1995)

    Article  Google Scholar 

  23. 23

    W. Götz, N.M. Johnson, H. Amano, and I. Akasaki, Appl. Phys. Lett. 65, 463 (1994)

    CAS  Article  Google Scholar 

  24. 24

    P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, J. Appl. Phys. 76, 304 (1994)

    CAS  Article  Google Scholar 

  25. 25

    W.I. Lee, T.C. Huang, J.D. Guo, and M.S. Feng, Appl. Phys. Lett. 67, 1721 (1995)

    Article  Google Scholar 

  26. 26

    W. Götz, N.M. Johnson, R.A. Street, H. Amano, and I. Akasaki, Mat. Res. Soc. Symp. Proc. Vol. 378, 491 (1995)

    Article  Google Scholar 

  27. 27

    S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992)

  28. 28

    W. Götz, L.T. Romano, J. Neugebauer, N.M. Johnson, C. Cheng, H. Liu, to be published

    CAS  Article  Google Scholar 

  29. 29

    T.F. Lee and T.C. McGill, J. Appl. Phys. 46, 373 (1975)

    Google Scholar 

  30. 30

    R.J. Molnar and T.D. Moustakas, Bull. Am. Phys. Soc. 38, 445 (1993)

    Article  Google Scholar 

  31. 31

    I. Akasaki, H. Amano, M. Kito, and K. Hiramatsu, J. Lumin. 48 & 49, 666 (1991)

    CAS  Article  Google Scholar 

  32. 32

    T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65, 593 (1994)

    CAS  Article  Google Scholar 

  33. 33

    N.M. Johnson, Mater. Res. Soc. Symp. Proc. 69, 75 (1986)

  34. 34

    W. Götz, N.M. Johnson, R.A. Street, H. Amano, and I. Akasaki, Appl. Phys. Lett. 66, 1340, (1995)

    Article  Google Scholar 

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Götz, W., Johnson, N., Bour, D. et al. Shallow and Deep Level Defects in GaN. MRS Online Proceedings Library 395, 443–454 (1995). https://doi.org/10.1557/PROC-395-443

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