InGaN based optical devices can cover from the violet through orange regions of the visible spectrum. Difficulties in the growth of this alloy, which have impeded its applications, include problems such as the high vapor pressure of In, weak In-N bonds and lack of sufficient nitrogen during growth. We report on the MOCVD growth of InxGa1−xN (0 < x < 0.4) on sapphire substrates in the 750 - 800 °C temperature range. X-ray diffraction data show full width at half maximum line widths as narrow as 250 arcsec for low values of x, while films with higher lnN% exhibit broader line widths. Room temperature photoluminescence spectra exhibit band edge emission, with emission from deep levels increasing with x. Preliminary investigations of AlGaN/lnGaN/AlGaN double heterostructures have been conducted.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Crystal Growth, 98, p. 209 (1989).
S. Strite and H. Morkoç, J. Vac. Sci. Tech., B10, 1237 (1992).
M. Asif Khan, S. Krishnankutty, R. A. Skogan, J. N. Kunznia, D. T. Olsen and T. George, Appl. Phys. Lett., 65, 520 (1994).
K. G. Fertitta, A. L. Holmes, J. G. Neff, F. J. Ciuba and R. D. Dupuis, Appl. Phys. Lett., 65, 1823 (1994).
S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett., 66, 1249 (1995).
T. Matsuoka, H. Tanaka, T. Sasaki, and A. Datsui, Inst. Phys. Conf., 106, 141 (1989).
H. Amano, N. Sawaki, I. Akasaki, and Y. Toyada, Appl. Phys. Lett., 48, 353 (1986).
B. McDermott, et. al., Appl. Phys. Lett., 56, 1172 (1990).
N. Karam, T. Parados, W. Rowland, J. Schetzina, N. El-Masry and S. M. Bedair, Appl. Phys. Lett., 67, 94 (1995).
K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. N. Bedair, E. L. Piner and N. A. El-Masry, Appl. Phys. Lett., accepted.
E. L. Piner, et. al., presented at MRS 1995 Fall Meeting.
About this article
Cite this article
Roberts, J., McIntosh, F., Boutros, K. et al. Growth of High Quality InGaN Films by Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 395, 273–278 (1995). https://doi.org/10.1557/PROC-395-273