MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Abstract

We have fabricated AlxGa1−xN/GaN heterostructures with high two-dimensional electron gas (2DEG) mobilities and high sheet carrier densities by metalorganic vapor phase epitaxy (MOVPE). The 2DEG sheet density and mobility exhibit a compositional dependence on the Al fraction of the electron donor layer. The highest mobility (5750 cm2/Vs at 16K) was measured in a sample with x=0.15 that had a sheet carrier density of 8.5×1012 cm−2. The undoped AlxGa1−xN layers have low background carrier concentrations and can be intentionally doped n-type using SiH4. The effect of intentional n-type doping of the AlxGa1−xN donor layer on the electrical properties of the 2DEG was studied in structures that included an undoped AlxGa1−xN spacer layer of varying thickness. Higher 2DEG mobilities were obtained when a 100Å thick undoped layer was included in the structure due to spatial separation of the 2DEG from ionized impurities in the doped AlxGa1−xN. These initial results demonstrate that the electrical properties of AlxGa1−xN/GaN heterostructures can be controlled by intentional doping and appropriate layer design.

This is a preview of subscription content, access via your institution.

References

  1. 1

    W. Götz, N.M. Johnson, R.A. Street, H. Amano and I. Akasaki, Appl. Phys. Lett. 66, 1340 (1995).

    CAS  Google Scholar 

  2. 2

    M.S. Shur, A. Khan, B. Gelmont, R.J. Trew and M.W. Shin, Inst. Phys. Conf. Ser. 141, p. 419 (1995).

    CAS  Article  Google Scholar 

  3. 3

    M.A. Khan, J.N. Kuznia, J.M. Van Hove, N. Pan and J. Carter, Appl. Phys. Lett 60, p. 3027 (1992).

    CAS  Article  Google Scholar 

  4. 4

    M. A. Khan, A. Bhattarai, J.N. Kuznia and D.T. Olson, Appl. Phys. Lett. 63, p. 1214 (1993).

    CAS  Article  Google Scholar 

  5. 5

    M. A. Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm and M.S. Shur, Appl. Phys. Lett. 65, p. 1121 (1994).

    CAS  Google Scholar 

  6. 6

    S.C. Binari, L. B. Rowland, G. Keiner, W. Kurppa, H.B. Dietrich, K. Doverspike and D.K. Gaskill, Inst. Phys. Conf. Ser. 141, p. 459 (1995).

    CAS  Article  Google Scholar 

  7. 7

    M.A. Khan, J.M. Van Hove, J.N. Kuznia and D.T. Olson, Appl. Phys. Lett. 58, p. 2408 (1991).

    CAS  Article  Google Scholar 

  8. 8

    M. A. Khan, Q. Chen, C.J. Sun, M. Shur and B. Gelmont, Appl. Phys. Lett. 67, p. 1429 (1995).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to J.M. Redwing.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Redwing, J., Flynn, J., Tischler, M. et al. MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures. MRS Online Proceedings Library 395, 201–206 (1995). https://doi.org/10.1557/PROC-395-201

Download citation