Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy

Abstract

Gallium nitride (GaN) films have been grown by hydride vapor phase epitaxy (HVPE) in a vertical reactor design. We report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably with the highest values reported in the literature for GaN. Specifically, a room temperature Hall mobility as high as 540 cm2 /V-s, with a corresponding carrier concentration of 2×1017 cm−3, have been attained. Additionally, the vesical reactor design has assisted in reducing nonuniformities in both film thickness as well as in transport properties due to depletion effects, as compared with horizontal designs. The dislocation density in these films has been determined by plan-view transmission electron microscopy to be ∼3×l08 cm−2 .

Photoluminescence spectra obtained at 2 K show intense, sharp, near-bandedge emission with minimal deep level emissions. Stimulated emission has been observed in these films, utilizing a nitrogen laser pump source (λ=337.1 nm) with a threshold pump power of ∼0.5 MW/cm2 . These results suggest that HVPE is viable for the growth of high-quality nitride films, particularly for the subsequent homoepitaxial overgrowth of device structures by other growth methods such as OMVPE and MBE.

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References

  1. 1

    R.D. Dupuis and F.A. Ponce, unpublished.

    CAS  Article  Google Scholar 

  2. 2

    S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).

    CAS  Article  Google Scholar 

  3. 3

    T. Detchprohm, K. Hiramatsu, N. Sawaki and I. Akasaki, J. Cryst. Growth 145, 192, (1994).

  4. 4

    R.J. Molnar, K.B. Nichols, P. Maki, E.R. Brown and I. Melngailis, Mat. Res. Soc. Symp. 378, 479 (1995).

    CAS  Article  Google Scholar 

  5. 5

    W. Seifert, R. Franzheld, E. Butter, H. Sobotta and V. Riede, Cryst. Res. Technol. 18, 383 (1983).

    CAS  Article  Google Scholar 

  6. 6

    M. Ilegems and H.C. Montgomery, J. Phys. Chem. Solids 34, 885 (1973).

  7. 7

    P. Maki, R.J. Molnar, R.L. Aggarwal, Z.L. Liau and I. Melngailis, this volume.

    CAS  Article  Google Scholar 

  8. 8

    K. Naniwae, S. Itoh, H. Amano, K. Itoh, K. Hiramatsu and I. Akasaki, J. Cryst. Growth 99, 381 (1990).

    CAS  Article  Google Scholar 

  9. 9

    T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki, Appl. Phys. Lett. 61, 2688 (1992).

    CAS  Google Scholar 

  10. 10

    G. Jacob, Acta Electronica 21, 159 (1978).

    CAS  Article  Google Scholar 

  11. 11

    K. Hiramatsu, T. Detchprohm and I. Akasaki, Jpn. J. Appl. Phys. 32, 1528 (1993).

  12. 12

    W. Götz, N.M. Johnson, D.P. Bour, C. Chen, H. Liu, C. Kuo and W. Imler, to be published in Mat. Res. Soc. Symp. 395.

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Correspondence to R.J. Molnar.

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Molnar, R., Aggarwal, R., Liau, Z. et al. Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy. MRS Online Proceedings Library 395, 189–194 (1995). https://doi.org/10.1557/PROC-395-189

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