We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘ∼37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.
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B.N. Sverdlov, G.A. Martin, H. Morkoç and D.J. Smith, Appl. Phys. Lett. 67, 2063 (1995).
H.M. Manasevit, F.M. Erdman, and W.I. Simpson, J. Electrochem. Soc. 118, 1855 (1971).
H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
S. Nakamura, Y. Harada, and M. Seno, Appl. Phys. Lett. 58, 2021 (1991).
K.G. Fertitta, A.L. Holmes, F.J. Ciuba, R. D. Dupuis, and F.A. Ponce, J. Electron. Mat. 24, 257 (1995).
Metalorganics purchased from Air Products and Chemicals, Allentown, PA, USA and Epichem Ltd., Merseyside, UK.
K.G. Fertitta, A.L. Holmes, J.G. Neff, F.J. Ciuba, and R.D. Dupuis, Appl. Phys. Lett. 65, 1923 (1994).
This unintentionally doped GaN/sapphire film was grown using MOCVD by other workers and exhibited a more “normal” X-ray rocking curve FWHM ~300–400 arc-s.
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Dupuis, R., Holmes, A., Grudowski, P. et al. High-Quality III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 395, 183–188 (1995). https://doi.org/10.1557/PROC-395-183