High-Quality III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition

Abstract

We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘ∼37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

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Correspondence to R.D. Dupuis.

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Dupuis, R., Holmes, A., Grudowski, P. et al. High-Quality III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 395, 183–188 (1995). https://doi.org/10.1557/PROC-395-183

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