The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: 1) react with NH3 to form GaN, 2) accumulate on the film surface, or 3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH3 towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH3 flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750°C and increases with NH3 flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
M. Weiss, G. Ertl and F. Nietschke, Appl. Surf. Sci., 2, 614 (1979)
S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
K. R. Evans, C. E. Stutz, D. K. Lorance, and R. L. Jones, J. Vac. Sci. Technol. B 7 (1989) 259.
K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, J. Vac. Sci. Tech. B 13, 1820 (1995).
T. Lei, C. R. Jones, and K. R. Evans, 1995 Spring Meeting of the Materials Research Society.
Supplied by EPI MBE Products Group, Saint Paul, MN, USA.
Lange’s Handbook of Chemistry, Ed. John A. Dean, McGraw-Hill Book Company (1973) p. 9.
About this article
Cite this article
Jones, C., Lei, T., Kaspi, R. et al. Gallium Incorporation Kinetics During GSMBE of GaN. MRS Online Proceedings Library 395, 141–144 (1995). https://doi.org/10.1557/PROC-395-141