NH3 as Nitrogen Source in MBE growth of GaN


We report on the growth of GaN in GSMBE using NH3 as nitrogen source. Special focus will be on the NH3 cracking, where we applied an On Surface Cracking technique (OSC). Using OSC we achieve photoluminescence linewidths as narrow as 5.5meV (5K) and mobilities of 220 cm2/Vs at room temperature.

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Correspondence to M. Kamp.

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Kamp, M., Mayer, M., Pelzmann, A. et al. NH3 as Nitrogen Source in MBE growth of GaN. MRS Online Proceedings Library 395, 135–139 (1995). https://doi.org/10.1557/PROC-395-135

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