NH3 as Nitrogen Source in MBE growth of GaN

Abstract

We report on the growth of GaN in GSMBE using NH3 as nitrogen source. Special focus will be on the NH3 cracking, where we applied an On Surface Cracking technique (OSC). Using OSC we achieve photoluminescence linewidths as narrow as 5.5meV (5K) and mobilities of 220 cm2/Vs at room temperature.

This is a preview of subscription content, access via your institution.

References

  1. 1

    M.E. Lin, Z. Ma, F.Y. Huang, Z.F. Fan, L.H. Allen, and H. Morkoç, Appl. Phys. Lett. 64, 1003, (1994).

    CAS  Article  Google Scholar 

  2. 2

    I. Akasaki and H. Amano, J. Cryst. Growth 146, 455 (1995).

    CAS  Article  Google Scholar 

  3. 3

    S. Nakamura, T. Mukai and M. Senoh, J. Appl. Phys. 76, 8189 (1994).

    Article  Google Scholar 

  4. 4

    R. J. Molnar, R. Singh and T. D. Moustakas, J.Electronic Materials 4, 275 (1995).

  5. 5

    M. Kamp, M. Mayer, A. Pelzmann, S. Menzel, H. Y. Chung, H. Sternschulte and K. J. Ebeling, in Proceedings of Topical Workshop on III-V Nitrides, Nagoya, Japan, 1995.

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to M. Kamp.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kamp, M., Mayer, M., Pelzmann, A. et al. NH3 as Nitrogen Source in MBE growth of GaN. MRS Online Proceedings Library 395, 135–139 (1995). https://doi.org/10.1557/PROC-395-135

Download citation