The Detrimental Effect of a Passivation on the Electromigration Lifetime of Narrow Al-Si-Cu Lines

MRS Online Proceedings Library volume 391, Article number: 447 (1995) Cite this article

Abstract

2 mm long, 0.8 μm wide and 0.8 μ thick Al-Si-Cu lines, passivated with a 1.14 μm thick PETEOS SiO2 were found to have a lower electromigration lifetime compared to identical unpassivated lines. The high tensile stress in the passivated lines is assumed to accelerate electromigration failure. This is confirmed by the very low activation energy for electromigration failure in the passivated lines and by the multiple events of recovery during and after electromigration testing, suggesting failure sites are slit voids.

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Affiliations

  1. IMEC, Leuven, Kapeldreef 75, 3001, Belgium

    A. Witvrouw, Ph. Roussel, B. Deweerdt & K. Maex

Authors
  1. A. Witvrouw
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  2. Ph. Roussel
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  3. B. Deweerdt
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  4. K. Maex
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Witvrouw, A., Roussel, P., Deweerdt, B. et al. The Detrimental Effect of a Passivation on the Electromigration Lifetime of Narrow Al-Si-Cu Lines. MRS Online Proceedings Library 391, 447 (1995). https://doi.org/10.1557/PROC-391-447

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