Comparison of theory and experiment is critical in microelectronic reliability. In this work, a model which has been previously used for electromigration time to failure predictions (developed by Harrison) is extended to include predictions for numbers of voids and void sizes. Predictions from the model are compared to experimental measurements. The model makes reasonable predictions for mean lifetimes, numbers of voids, and void areas with very few free parameters. The model, however, doesnot adequately reproduce therange of lifetimes found in experiment.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
James W. Harrison, Jr., IEEE Trans, on Electron Devices, 35 (1988) 2170.
Yolanda J. Kime and Peter Grach, Mat. Res. Soc. Symp. Proc. (1994)
Yolanda J.Kime, AFOSR Summer Faculty Research Final Report (1994) 13-1
M.J. Attardo, R. Rutledge, and R.C. Jack, J. Appl. Physics., 42 (1971) 4343.
R.V. Penney, J. Phys. Chem. Solids, 25 (1964)335.
H.B. Huntington and A.R. Crone, J. Phys.Chem. Solids, 20 (1961) 76.
M.W. Levi and J.B. Mattila, Proceedings VMIC Santa Clara, June 1993, p258
James W. Harrison, User’s Manual for EMSIM, (1991)
About this article
Cite this article
Kime, Y.J. A Macroscopic Model of Electromigration: Comparison with Experiment. MRS Online Proceedings Library 391, 367 (1995). https://doi.org/10.1557/PROC-391-367