The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapour deposition

MRS Online Proceedings Library volume 391, Article number: 315 (1995) Cite this article

Abstract

Copper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1

    S. Murarka, Conference Proceedings VLSI VI, (MRS Symposia Proceedings VLSI 1991) p. 179.

  2. 2

    Ravikumar, Chem. Mater. 4, 577 (1992).

    Article  Google Scholar 

  3. 3

    M.J.Hampden-Smith, T.T.Kodas, M.Paffett, J.D.Farr and H.K.Shin, ibid. 2, 636 (1990).

    Article  Google Scholar 

  4. 4

    A.Jain et al., Semicon. Int. 16, 128 (1993).

    CAS  Google Scholar 

  5. 5

    S.K.Reynelds, C.J.Smart, E.F.Baran, T.H.Baum, C.E.Larson and P.J.Brock, Appl. Phys. Lett. 59, 2332 (1991).

    Article  Google Scholar 

  6. 6

    Thomas H.Baum and Carl E.Larson, J. Electrochem. Soc. 140, 154 (1993).

    CAS  Article  Google Scholar 

  7. 7

    E.Bauer, Thin Solid Films, 12, 167 (1979).

    Article  Google Scholar 

  8. 8

    D. A.Porter and K.E.Easterling, Phase Transformations in Metals and Alloys (Van Nostrand Reinhold Co. Ltd., New York, 1981)p. 112.

    Google Scholar 

  9. 9

    L.E.Murr, Interfacial Phenomena in Metals and Alloys (Addison-Wesley Publishing Co., Massachusetts, 1975) p. 155.

    Google Scholar 

  10. 10

    ibid. p. 124.

    Google Scholar 

  11. 11

    Ludmila Eckertova, Physics of Thin Films (Plenum, New York and London, 1984)p.98.

    Google Scholar 

  12. 12

    J.A.T.Norman, B.A.Muratore, P.N.Dyer, D.ARoberts, A.K.Hochberg and L.H.Dubois, Materials Science and Engineering, B17, 87 (1993)

    CAS  Article  Google Scholar 

  13. 13

    V.M.Donnelly and ME. Gross, J. Vac. Sci. Technol. A11(1), 66 (1993)

    Article  Google Scholar 

Download references

Author information

Affiliations

  1. Hyundai Electronics Industries Co., Ltd., Kyungki-do, Icheon, Korea

    S. S. Yoon

  2. Korea Advanced Institute of Science and Technology, Taejon, 373-1, Kusung-dong, 305-701, Yusung-gu, Korea

    S. W. Kang & S. S. Chun

Authors
  1. S. S. Yoon
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. W. Kang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. S. Chun
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Yoon, S.S., Kang, S.W. & Chun, S.S. The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapour deposition. MRS Online Proceedings Library 391, 315 (1995). https://doi.org/10.1557/PROC-391-315

Download citation