Real-Time Tem Studies of Electromigration in Submicron Aluminum Runners

MRS Online Proceedings Library volume 391, Article number: 249 (1995) Cite this article

Abstract

Direct real-time observations of electromigration (EM) in submicron Al interconnects were made using a special sample-stage which allowed TEM observations to be recorded while simultaneously heating and passing current through the sample. The samples consisted of 4000Å thick Al(0.5wt%Cu) patterned over a TEM-transparent window into five runners in parallel, with linewidths 0.2, 0.3, 0.5, 0.8, and 1.0μm. Both passivated and unpassivated samples were examined. A current density of 2 x 106A/cm2 was used with temperatures ranging from 200 - 350°C. The experiments were done using constant voltage testing, and we used a special sample design which dramatically minimized Joule-heating. Our approach has allowed us to directly observe voids form, grow, migrate, pin, fail a runner, and heal, all with respect to the detailed local microstructure of the runners.

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Author notes

  1. S. P. Riege

    Present address: Universitat Hamburg, Hamburg, Germany

  2. A. W. Hunt

    Present address: Harvard University, MA, Cambridge, USA

Affiliations

  1. AT&T Bell Laboratories, New Jersey, 07974, Murray Hill, USA

    S. P. Riege, A. W. Hunt & J. A. Prybyla

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  1. S. P. Riege
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  2. A. W. Hunt
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  3. J. A. Prybyla
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Riege, S.P., Hunt, A.W. & Prybyla, J.A. Real-Time Tem Studies of Electromigration in Submicron Aluminum Runners. MRS Online Proceedings Library 391, 249 (1995). https://doi.org/10.1557/PROC-391-249

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