The effect of electric arc plasma jet treatment (APJT) on MOS structure reliability has been investigated. Si/SiO2/Si*/Al structures have been studied using the technique of constant current charge to breakdown before and after APJT. The study showed that APJT can improve MOS structure reliability: constant current charge to breakdown Qbd increased to more than 5 C·cm-2 and breakdown field Ebd increased to more than 20 MV/cm. This result was attributed to a structural modification of SiO2 and its interfaces as a result of APJT. Evidence for these structural changes is the appearance of additional SiO2 IR absorption peak which was observed by us.
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Maslovsky, V.M., Pavlov, G.Y. Effect of Electric ARC Plasma Jet Treatment on Mos Structure Reliability. MRS Online Proceedings Library 391, 139 (1995). https://doi.org/10.1557/PROC-391-139