Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process


Deposition of a thin film in the LPCVD process has been simulated by a Monte–Carlo method based on a simple model taking into account the desorption, the surface reaction, and the surface migration of the film precursor. The model has been used for the simulation of the film profile obtained in a narrow and deep trench and of the film crystallinity on a flat surface. The simulation results describe successfully those obtained by experiments under various process conditions.

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  1. 1

    C. M. McConica and K. Krishnamani, J. Electrochem. Soc. 133, 542(1986).

    Article  Google Scholar 

  2. 2

    R. M. Levin and K. L. Evans, J. Vac. Sci. Technol. B 1, 54(1983).

    CAS  Article  Google Scholar 

  3. 3

    H. C. Wulu, K. C. Saraswat, and J. P. McVittie, J. Electrochem. Soc. 138, 831(1991).

    Article  Google Scholar 

  4. 4

    A. G. Naumovets and Y. S. Vedula, Surface Science Reports 4, 425(1985).

    Article  Google Scholar 

  5. 5

    T. Bonfield and R. Blumenthal, in Tungsten and Other Advanced Metals for VLSI/ULSI Applications V, edited by S. S. Wong and S. Furukawa (MRS, Pitts., 1990), pp. 145156.

    Google Scholar 

  6. 6

    S. M. Sze, VLSI Technology, 2nd ed. McGraw-Hill, New York, 1988), p. 255.

    Google Scholar 

  7. 7

    D. A. King, CRC Critical Rev. of Solid State and Materials Sciences 7, 167(1977).

    Article  Google Scholar 

  8. 8

    A. Zangwill, Physics at Surfaces (Cambridge Univ. Press, 1989), pp. 363–375.

  9. 9

    J. R. Dacey, Industrial and Engineering Chemistry 57, 27(1965).

    Article  Google Scholar 

  10. 10

    T. J. Chuang, Surface Science Reports 3, 1(1983).

    CAS  Article  Google Scholar 

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Correspondence to Gyeong Soon Hwang.

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Hwang, G.S., Shin, C.B. & Moon, S.H. Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process. MRS Online Proceedings Library 389, 125–130 (1995).

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