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Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process

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Abstract

Deposition of a thin film in the LPCVD process has been simulated by a Monte–Carlo method based on a simple model taking into account the desorption, the surface reaction, and the surface migration of the film precursor. The model has been used for the simulation of the film profile obtained in a narrow and deep trench and of the film crystallinity on a flat surface. The simulation results describe successfully those obtained by experiments under various process conditions.

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Authors and Affiliations

  1. Dept. of Chemical Engineering, Seoul National University, Seoul, 151-742, Korea

    Gyeong Soon Hwang & Sang Heup Moon

  2. Dept. of Chemical Engineering, Ajou University, Suwon, 441-749, Korea

    Chee Burm Shin

Authors
  1. Gyeong Soon Hwang
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  2. Chee Burm Shin
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  3. Sang Heup Moon
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Hwang, G.S., Shin, C.B. & Moon, S.H. Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process. MRS Online Proceedings Library 389, 125–130 (1995). https://doi.org/10.1557/PROC-389-125

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  • DOI: https://doi.org/10.1557/PROC-389-125

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