Abstract
The structure and properties of sputter NiFe thin film deposited on both thermal oxide and thin tantalum nitride have been studied. The magnetic anisotropy field HK increases to 8.2 Oe when the NiFe film was deposited on a thin tantalum nitride underlayer. Anisotropic stress was found on the sample film with tantalum nitride underlayer. Results of X-ray diffraction show that a thin tantalum nitride underlayer appears to promote a preferred crystalline orientation formation of the NiFe film. The induced magnetic anisotropy is attributed to the formation of the preferred crystalline orientation and the induced anisotropic magnetoelastic energy which is associated with the anisotropic stress of the sample film.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Thiaville and A. Fert, J. Magn. Magn. Mater. 113, 161(1992).
B. D. Cullity, Introduction to Magnetic Materials, 2nd ed. (Addison-Wesley, Reading, MA, 1972) p. 226–275
G. Chen, IEEE Trans, on Magnetics, MAG-22, No.5, 334 (1986)
R. D. Fisher, J. C. Allan, and J. L. Pressesky, IEEE Trans, on Magnetics, MAG-22, No.5, 352(1986)
J. C. Allan and R. D. Fisher, IEEE Trans, on Magnetics, MAG-23, 112 (1986)
J. Lin, C. Wu, and J. M. Sivertsen, IEEE Trans, on Magnetics, MAG-26, No.1, 39–41 (1990)
T. Yeh, J. M. Sivertsen, and J. H. Judy, IEEE Trans, on Magnetics, MAG-26, No.5, 1590–1592 (1990)
T. Yeh, PhD thesis, University of Minnesota, 1992
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Yeh, T., Berg, L., Falenschek, J. et al. Induced Magnetic Anisotropy of Sputter NiFe Thin Films on Thin Tantalum Nitride Underlayer. MRS Online Proceedings Library 384, 233–238 (1995). https://doi.org/10.1557/PROC-384-233
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-384-233