Characterization of Multilayer Thin Film Structures for Gas Sensor Applications


A nicrofabricated silicon-based chemical gas sensor with a discontinuous film of Pt / TiOx, as the active sensing component has been characterized by atomic force microscopy, environmental scanning electron microscopy, and transmission electron microscopy. A study of the device’s multilayer structure and of the thin sensing film is undertaken to understand and control the sensing properties of the metal / semiconducting materials. The purpose of this research is to advance the understanding of the conduction mechanism and provide a basis for optimizing the sensing properties and microstructure of the sensing device.

This is a preview of subscription content, access via your institution.


  1. 1.

    C.L. Johnson, J. W. Schwank, and K. D. Wise, Sensors and Actuators B, 20, 55–62 (1994).

    CAS  Article  Google Scholar 

  2. 2.

    N. Najafi, K. D. Wise, and J. W. Schwank, IEEE Trans. Electron Devices, 41, 1770–1777 (1994).

    CAS  Article  Google Scholar 

  3. 3.

    Maissei, L. I. and Reinhard Gland Eds., Handbook of Thin Film Technology, (McGraw Hill Book Co., New York, 1970).

    Google Scholar 

Download references

Author information



Corresponding author

Correspondence to M. Dibattista.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Dibattista, M., Patel, S.V., Wise, K.D. et al. Characterization of Multilayer Thin Film Structures for Gas Sensor Applications. MRS Online Proceedings Library 382, 477 (1995).

Download citation