A nicrofabricated silicon-based chemical gas sensor with a discontinuous film of Pt / TiOx, as the active sensing component has been characterized by atomic force microscopy, environmental scanning electron microscopy, and transmission electron microscopy. A study of the device’s multilayer structure and of the thin sensing film is undertaken to understand and control the sensing properties of the metal / semiconducting materials. The purpose of this research is to advance the understanding of the conduction mechanism and provide a basis for optimizing the sensing properties and microstructure of the sensing device.
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Dibattista, M., Patel, S.V., Wise, K.D. et al. Characterization of Multilayer Thin Film Structures for Gas Sensor Applications. MRS Online Proceedings Library 382, 477 (1995). https://doi.org/10.1557/PROC-382-477