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Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2

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Abstract

We have studied the growth of undoped and n+ μc-Si:H (:CI) films by Remote Plasma CVD using SiH4/SiH2Cl2/H2/He mixtures. It was found that the μc-Si film can be fabricated by increasing flow rate of SiH2Cl2 and/or H2. The deposited undoped μc-Si film exhibited a maximum crystalline volume fraction of 85 %, obtained from Raman spectroscopy. The n-type μc-Si film, deposited with SiH4/SiH2Cl2/H2/PH3/He mixtures, shows a room temperature conductivity of 2 S/cm, conductivity activation energy of 29.8 meV and optical band gap of-2.0 eV. The optical band gap of n-type μc-S1 deposited using SiH2Cl2 is much higher compared to conventional μc-Si film.

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  1. Department of Physics, Kyung Hee University, Dongdaemoon-ku, 130–701, Seoul, Korea

    Jae Seong Byun, Hong Bin Jeon, Jung Mok Jun, Jae Ho Yoo, Kyung Ha Lee, Min Park & Jin Jang

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  1. Jae Seong Byun
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  2. Hong Bin Jeon
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  3. Jung Mok Jun
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  4. Jae Ho Yoo
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  5. Kyung Ha Lee
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  6. Min Park
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  7. Jin Jang
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Byun, J.S., Jeon, H.B., Jun, J.M. et al. Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2. MRS Online Proceedings Library 377, 75–80 (1995). https://doi.org/10.1557/PROC-377-75

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