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TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates

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Abstract

We evaluated the characteristics of a-Si:H/a-SiNx:H thin film transistors (TFTs), and of separately deposited a-Si:H films, as functions of the a-Si:H deposition power in a high-rate, large-area, 40 MHz PE-CVD system. TFT performance and a-Si:H film properties improve with decreasing power density and deposition rate. However, low defect density a-Si:H material was deposited at rates as high as 1500 Å/min. TFTs with gate nitride deposited at 1000 A/min show excellent I-V characteristics when the a-Si:H deposition power is low enough. The TFT electron mobility in the linear regime correlates well with the Urbach energy of the a-Si:H films, suggesting that the quality of the a-Si: H controls the performance of our TFTs.

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Authors and Affiliations

  1. Department of Electrical Engineering, Princeton University, Princeton, 08544, NJ, USA

    S. Sherman & S. Wagner

  2. AT&T Bell Laboratories, Murray Hill, 07974, NJ, USA

    P-Y. Lu & R. A. Gottscho

Authors
  1. S. Sherman
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  2. P-Y. Lu
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  3. R. A. Gottscho
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  4. S. Wagner
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Sherman, S., Lu, PY., Gottscho, R.A. et al. TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates. MRS Online Proceedings Library 377, 749–753 (1995). https://doi.org/10.1557/PROC-377-749

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  • DOI: https://doi.org/10.1557/PROC-377-749

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