Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells

Abstract

The electrical bandgap of microcrystalline silicon (μc-Si:H) p type layers used in a-Si:H alloy solar cells and the band edge discontinuities between μc-Si:H and a-Si:H alloys have been determined by internal photoemission measurements. The bandgap of μc-Si:H is found to be in the range of 1.50 to 1.57 eV, and the discontinuities at the conduction and the valence band edges are 0 to 0.07 and 0.26 to 0.35 eV, respectively. Use of these parameters in the numerical simulation of single-junction a-Si:H and a-SiGe:H alloy solar cells is found to predict experimental results of solar cell performance.

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Xu, X., Banerjee, A., Yang, J. et al. Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells. MRS Online Proceedings Library 377, 651–656 (1995). https://doi.org/10.1557/PROC-377-651

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