Light-Induced Changes Among Fast-Relaxing Hydrogens in Plasma-Deposited Hydrogenated Amorphous Silicon

Abstract

Light-induced rearrangements in a-Si:H,D during and after illumination have been studied by deuteron magnetic resonance (DMR). A film sample was deposited on a 230°C Al substrate by plasma decomposition of S1H4 and D2. The high quality film contained 4 at.% H and 4 at. % D. DMR spectra of fast-relaxing components were examined at 700 msec or less after radio frequency saturation. At 30 K these showed a broad central signal (primarily nanovoid-trapped HD and D2), part of which shifted paramagnetically during illumination. No comparable shifts were shown by spectral components from Si-bonded hydrogen or from microvoid-contained dense fluid hydrogen. The observed post-illumination shifts vanished upon 150°C dark anneal and reflected light-induced metastable magnetic changes in the surroundings of hydrogen trapped in nanovoids.

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Correspondence to M. J. Kernan.

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Kernan, M.J., Corey, R.L., Fedders, P.A. et al. Light-Induced Changes Among Fast-Relaxing Hydrogens in Plasma-Deposited Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 377, 395–399 (1995). https://doi.org/10.1557/PROC-377-395

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