Light-induced rearrangements in a-Si:H,D during and after illumination have been studied by deuteron magnetic resonance (DMR). A film sample was deposited on a 230°C Al substrate by plasma decomposition of S1H4 and D2. The high quality film contained 4 at.% H and 4 at. % D. DMR spectra of fast-relaxing components were examined at 700 msec or less after radio frequency saturation. At 30 K these showed a broad central signal (primarily nanovoid-trapped HD and D2), part of which shifted paramagnetically during illumination. No comparable shifts were shown by spectral components from Si-bonded hydrogen or from microvoid-contained dense fluid hydrogen. The observed post-illumination shifts vanished upon 150°C dark anneal and reflected light-induced metastable magnetic changes in the surroundings of hydrogen trapped in nanovoids.
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R. E. Norberg, J. Bodart, R. Corey, P. A. Fedders, W. Paul, W. A. Turner, D. Pang, and A. Wetsel, Mat. Res. Soc. Proc. 258, 377 (1992).
M. P. Volz, P. Santos-Filho, M. S. Conradi, P. A. Fedders, R. E. Norberg, W. Turner, and W. Paul, Phys. Rev. Lett. 63, 2582 (1989).
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Kernan, M.J., Corey, R.L., Fedders, P.A. et al. Light-Induced Changes Among Fast-Relaxing Hydrogens in Plasma-Deposited Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 377, 395–399 (1995). https://doi.org/10.1557/PROC-377-395