We have deposited Si-nitride thin films by remote plasma-enhanced chemical-vapor deposition using different combinations of hydrogen and deuterium source gases. In one set of experiments, NH3 and SiH4 were injected downstream from a He plasma and the ratio of NH3 to SiH4 was adjusted so that deposited films contained IR-detectable bonded-H in SiN-H arrangements, but not in Si-H arrangements. Similar results were obtained using the same ND3 to SiD4 flow ratio; these films contained only SiN-D groups. However, films prepared from ND3 and SiH4 displayed both SiN-D and SiN-H groups in essentially equal concentrations establishing that H and D atoms bonded to N are derived from both source gases SiH (D) 4 and NH (D) 3, and further that inter-mixing of H and/or D atoms occurs at the growth surface. This reaction pathway is supported by additional studies in which films were grown from SD4 and ND3 with either i) He or ii) He/H2 mixtures being plasma excited. The films grown from the deuterated source gases without H2, displayed only SiN-D bands, whereas the films grown using the He/H2 mixture displayed both SiN-H and SiN-D bands. The total concentration of N-H and N-D bonds in the films grown from the He/H2 excitation was the same as the concentration of N-D, supporting the surface reaction model. In-situ mass spectrometry provides additional insights in the film deposition reactions.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
G. Parsons, Ph.D. thesis, North Carolina State University (1989).
Y. Ma, Ph.D. thesis, North Carolina State University (1993).
G. Stevens, Z. Lu, P. Santos-Filho, S. Habermehl, and G. Lucovsky, (unpublished).
Z. Lu, P. Santos-Filho, G. Stevens, M. Williams, and G. Lucovsky Journal of Vacuum Technology, A13, (1995) (in press).
SXP Elite Manual, operators manual for VG-300, VG Associates.
About this article
Cite this article
Stevens, G., Santos-Filho, P., Habermehl, S. et al. Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition. MRS Online Proceedings Library 377, 313–318 (1995). https://doi.org/10.1557/PROC-377-313