ZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5X10−5Q m was obtained for the ZnO film, and of ρ = 3.5×10−5 Ωm was obtained for the ZnO:Al film.
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Nishino, J., Ohshio, S. & Kamata, K. Preparation of Zinc Oxide Films by Low-Pressure Chemical Vapor Deposition Method. MRS Online Proceedings Library 363, 219–224 (1994). https://doi.org/10.1557/PROC-363-219