Abstract
ZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5X10−5Q m was obtained for the ZnO film, and of ρ = 3.5×10−5 Ωm was obtained for the ZnO:Al film.
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J. M. Hammer, D. J. Channin, M. T. Duffy, and J. P. Wittke, Appl. Phys. Lett., 21 [8] 358–60(1972).
M. J. Vellekoop, A. Venema, C. C. G. Visser, and P. M. Sarro, Ceram. Bull., 69 [9] 1503–1505 (1990).
F. C. M. van de Pol, Ceram. Bull., 69 [12] 1959–65 (1990).
J. Aranovich, A. Ortiz, and R. H. Bube, J. Vac. Sci. Technol., 16 [4] 994–1003 (1979).
W. W. Wenas, A. Yamada, M. Konagai, and K. Takahashi, Jpn. J. Appl. Phys., 30 [3B] L441–43(1991).
S. Oktik, Prog. Crystal Growth and Charact., 17 [3], pp. 171–240 (1988).
K. Kamata, J. Nishino, S. Ohshio, and Maruyama Kazunori and M. Ohtuki, J. Am. Ceram. Soc., 77 [2] 505–508(1994).
J. Nishino, S. Ohshio, and K. Kamata, J. Am. Ceram. Soc., 75 [12] 3469–72 (1992).
E. Burstein, Phys. Rev., 93, 632–33 (1954).
T. S. Moss, Proc. Phys. Soc. London, B67, 775–82(1954).
I. Hamberg, C. G. Granqvist, K.-F. Berggren, B. E. Sernelius, and L. Engström, Phys. Rev., B30, 3240–49 (1984).
B. E. Sernelius, Phys. Rev., B36, 4878–87(1987).
K.-F. Berggren and B. E. Sernelius, Phys. Rev., B24,1971–86 (1981)
B. E. Sernelius, K. -F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist, Phys. Rev., B37,10244–48 (1988).
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Nishino, J., Ohshio, S. & Kamata, K. Preparation of Zinc Oxide Films by Low-Pressure Chemical Vapor Deposition Method. MRS Online Proceedings Library 363, 219–224 (1994). https://doi.org/10.1557/PROC-363-219
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DOI: https://doi.org/10.1557/PROC-363-219