Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

Abstract

Diamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109-1011 /cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM ) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxia1 growth of monocrystal1ine diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

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Correspondence to Yan Chen.

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Chen, Y., Mei, J., Chen, Q. et al. Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition. MRS Online Proceedings Library 363, 175–180 (1994). https://doi.org/10.1557/PROC-363-175

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