Abstract
Diamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109-1011 /cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM ) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxia1 growth of monocrystal1ine diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.
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References
1_B.V. Spitsyn, L.C. Bouilov, and B.V. Deryaguin, J.Cryst.Growth, 52, 219(1981)
2_M. Matsumoto, Y. Sato, M. Kamo, and N. Setaka, Jpn.J.Appl.Phys., 71, L183 (1982)
3_M. Kamo, Y. Sato, S. Matosumoto, and N. Setaka, J.Cryst.Growth 62, 642 (1983)
4_K.V. Ravi and A. Joshi, Appl.Phys.Lett., 58(3), 246 (1991)
5_K. arihara, K. Sasaki, M. Kawarada, and N. Koshina, Appl.Phys.Lett. 52, 437 (1988)
6_K. Suzuki, A. Sawabe, H. Yasada, and T. Inuzaka, Appl.Phys.Lett. 50, 728 (1987)
7_A. Sawabe and T. Inuzuka, Thin Solid Films 137, 89 (1986)
8_C.-P. Chang, D.L. Flamm, D.E. Ibbotson, and J.A. Mucha, J.Appl.Phys, 63, 1744 (1988)
9_A.A. Morrish, Appl.Phys.Lett. 59, 417 (1991)
10_K.V. Ravi and C.A. Koch, Appl.Phys.Lett. 57, 348 (1992)
11_B.R. Stoner, G.-H.M. Ma, S.D. Wolter, and J.T. Glass, Phys.Rev.B 45, 11067 (1992)
12_S.S. Park and J.Y. Lee, J.Appl.Phys, 69, 2618 (1991)
13_S. Yugo, T. Kimura and T. Kanai, Diamond and Related Materials, 2,328 (1992)
14_D.N. Belton, S.J. Harris, S.J. Schmieg, A.M. Weiner and T.A. Perry, Appl.Phys.Lett. 54, 416 (1989)
15_X. Jiang and C.-P. Klages, Appl. Phys. Lett. 62, 3438 (1993)
16_S.D. Wolter, B.R. Stoner and J.T. Glass, Appl. Phys. Lett. 62, 1215 (1993)
17_T. debroy, K. Tankala, W.A. Yarbrough, and R. Messier, J.Appl.Phys. 68, 2424 (1990)
18_R.B. Rird, W.E. Stewatt, and E.N. Lightfoot, Transport Phenomena (Wiley, New York, 1960)
19_L.E. Kline, W.D. Partlow, and W.E. Bies, J.Appl.Phys. 65,70 (1989)
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Chen, Y., Mei, J., Chen, Q. et al. Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition. MRS Online Proceedings Library 363, 175–180 (1994). https://doi.org/10.1557/PROC-363-175
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