Abstract
As developed by Senturia and co-workers [1], microdielectrometry is a technique for measuring complex permittivity utilizing microfabrication technology to incorporate both the interdigital sensing electrodes and associated circuitry on the same microchip. By covering a microdielectrometer chip with a thin layer of C60, it is possible to dynamically monitor the film’s frequency response and dielectric properties as a function of doping with selected gases and other species.
It is known that solid C60 has a substantial amount of interstitial volume. The presence of mobile ions in these spaces compromises the breakdown voltage and makes pure C60 unsuitable for applications requiring high-quality dielectric films. However, various immobile ions or neutral species (e.g. oxygen) can be made to fill the interstitial volume, changing the characteristics of the C60 films and, in some cases, improving the dielectric properties. In-situ microdielectric measurements of pristine and modified C60 films were performed for frequencies ranging from 0.005 Hz to 100 kHz. Based on the low-frequency behavior of the dielectric constant, a model is proposed for the mechanism of oxygen diffusion into the interstitial spaces of the fullerene material.
Similar content being viewed by others
References
S. D. Senturia and S. L. Garverick, Method and Apparatus for Microdielectrometry, U.S. Patent No. 4,423,371, Dec. 27, 1983.
W. Krätschmer et al., Nature 347, 354 (1990).
A. F. Hebard et al., Appl. Phys. Lett. 59, 2109 (1991).
G. B. Alers et al., Science 257, 511 (1992).
S. L. Ren et al., Appl. Phys. Lett. 59, 2678 (1991).
Y. Wang et al., Phys. Rev. B 45, 14396 (1992).
A. M. Rao et al., Science 259, 955 (1993).
E. Sohmen, J. Fink, and W. Krlitschmer, Z. Phys. B 86, 87 (1992).
K. A. Wang et al., Phys. Rev. B 48, 11375 (1993).
P. C. Eklund et al., in Thin Solid Films, edited by D. M. Gruen (World Scientific Publishing Co. Ltd., Singapore, 1995).
F. Wooten, Optical Properties of Solids (Academic, New York, 1972).
S. Saito and A. Oshiyama, Phys. Rev. Lett. 66, 2637 (1991).
M. K. Kelly et al., Phys. Rev. B 46, 4963 (1992).
A. Lucas et al., Phys. Rev. B 45, 13694 (1992).
I. V. Hertel et al., Phys. Rev. Lett. 68, 784 (1992).
C. S. Yannoni et al., J. Phys. Chem. 95, 9 (1991).
X. D. Shi et al., Phys. Rev. Lett. 68, 827 (1992).
A. K. Jonscher, Dielectric Relazation in Solids (Chelsea Dielectrics Press, London, 1983).
S. D. Senturia, J. N. F. Sheppard, H. L. Lee, and D. R. Day, J. Adhesion 15, 69 (1982).
N. F. Sheppard, D. R. Day, H. L. Lee, and S. D. Senturia, Sensors and Actuators 2, 263 (1982).
S. L. Garverick and S. D. Senturia, IEEE Trans. on Electron Devices ED-29, 90 (1982).
K. Hoshimono et al., Jpn. J. of Appl. Phys. 32, L1070 (1993).
N. Minami and M. Sato, Synthetic Metals 56, 3092 (1993).
R. A. Assink et al., J. of Mater. Res. 7, 2136 (1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pevzner, B., Hebard, A.F., Haddon, R.C. et al. Microdielectric Measurements of Pristine and Modified Thin Fullerene (C60) Films. MRS Online Proceedings Library 359, 423–428 (1994). https://doi.org/10.1557/PROC-359-423
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-359-423