Metal Film Nucleation and Growth on C60 Interfacial Layers

Abstract

The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/C60 (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/C60 and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth.

This is a preview of subscription content, access via your institution.

|

  1. [1]

    W. Krätschmer, L. D. Lamb, K. Fostiropoulis, and D. R. Huffman, Nature 347, 354 (1990).

    Article  Google Scholar 

  2. [2]

    For reviews, see A. F. Hebard, Annu. Rev. Mater. Sci. 23, 159 (1993)

    CAS  Article  Google Scholar 

  3. [2]a

    J. Weaver and D. M. Poirier, Solid State Physics 48 (ed. by H. Ehrenreich and F. Spaepen, Academic Press, 1994) p.1.

    CAS  Article  Google Scholar 

  4. [3]

    Y. Kuk, D. K. Kim, Y. D. Suh, K. H. Park, H. P. Noh, S. J. Oh, and S. K. Kim, Phys. Rev. Lett. 70, 1948 (1993).

    CAS  Article  Google Scholar 

  5. [4]

    J. E. Rowe, P. Rudolf, L. H. Tjeng, R. A. Malic, G. Meigs, and C. T. Chen, Int. J. Mod. Phys. B 6, 3909 (1992).

    CAS  Article  Google Scholar 

  6. [5]

    T. R. Ohno, Y. Chen, S. E. Harvey, G. H. Kroll, J. H. Weaver, R. E. Haufler, R. E. Smalley, Phys. Rev. B 44, 13747 (1991).

    CAS  Article  Google Scholar 

  7. [6]

    S. J. Chase, W. S. Bacsa, M. G. Mitch, L. J. Pilione, and J. S. Lannin, Phys. Rev. B 46, 7873 (1992).

    CAS  Article  Google Scholar 

  8. [7]

    T. R. Ohno, Y. Chen, S. E. Harvey, G. H. Kroll, P. J. Benning, J. H. Weaver, L. P. F. Chi-bante, R. E. Smalley, Phys. Rev. B 47, 2389 (1993).

    CAS  Article  Google Scholar 

  9. [8]

    G. Gensterblum, L. -M. Yu, J. -J. Pireaux, P. A. Thiry, R. Caudano, J. -M. Themlin, S. Bouz-idi, F. Coletti, and J. -M. Debever, Appl. Phys. A 56, 175 (1993).

    Article  Google Scholar 

  10. [9]

    A. F. Hebard, O. Zhou, Q. Zhong, R. M. Fleming, R. C. Haddon, Thin Solid Films (in press).

  11. [10]

    A. F. Hebard, C. B. Eom, Y. Iwasa, K. B. Lyons, G. A. Thomas, D. H. Rapkine, R. M. Fleming, R. C. Haddon, Julia M. Phillips, J. H. Marshall, R. H. Eick, Phys. Rev. B (in press).

  12. [11]

    W. Zhao, K. Luo, J. Chen, J. Zhang, C. Li, D. Yin, Z. Gu, X. Zhou, Z. Jin, Sol. State Commun. 83, 853 (1992).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to A. F. Hebard.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Hebard, A.F., Eom, CB., Haddon, R.C. et al. Metal Film Nucleation and Growth on C60 Interfacial Layers. MRS Online Proceedings Library 359, 387–392 (1994). https://doi.org/10.1557/PROC-359-387

Download citation