Metal Film Nucleation and Growth on C60 Interfacial Layers


The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/C60 (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/C60 and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth.

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Hebard, A.F., Eom, CB., Haddon, R.C. et al. Metal Film Nucleation and Growth on C60 Interfacial Layers. MRS Online Proceedings Library 359, 387–392 (1994).

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