Visible Light Emission in Silicon-Interface Adsorbed Gas Superlattices

MRS Online Proceedings Library volume 358, Article number: 825 (1994) Cite this article

Abstract

Having an indirect fundamental bandgap, unlike III-V or II-VI compound semiconductors, silicon has not played a role in optoelectronic applications such as injection lasers and light emitting diodes. In an attempt to introduce a sufficient quantum size effect, we present the experimental results on a new type of silicon based superlattices consisting of alternating layers of silicon and monolayers of adsorbed gases, Si/IAG multilayers (Si/Interface Adsorbed Gas), constructed by repeated interruptions of silicon deposition with adsorbed gases of oxygen and hydrogen. Fairly strong visible luminescence has been observed.

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Author information

Author notes

  1. Jonder Morais

    Present address: Physics Institute, UNICAMP, Campinas, Brazil

  2. Amanda Bowhill

    Present address: , 155 A Round Hill Road, Northampton, MA, 01060, USA

Affiliations

  1. University of North Carolina at Charlotte, Charlotte, NC, 28223, USA

    Raphael Tsu, Jonder Morais & Amanda Bowhill

Authors
  1. Raphael Tsu
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  2. Jonder Morais
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  3. Amanda Bowhill
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Correspondence to Raphael Tsu.

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Tsu, R., Morais, J. & Bowhill, A. Visible Light Emission in Silicon-Interface Adsorbed Gas Superlattices. MRS Online Proceedings Library 358, 825 (1994). https://doi.org/10.1557/PROC-358-825

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