Microcrystalline β−SiC Growth on Si by ECR-CVD at 500°C

Abstract

Microcrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

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Correspondence to Kuan-Lun Cheng.

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Cheng, KL., Liu, CC., Cheng, HC. et al. Microcrystalline β−SiC Growth on Si by ECR-CVD at 500°C. MRS Online Proceedings Library 358, 799 (1994). https://doi.org/10.1557/PROC-358-799

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