Abstract
Photoluminescence (PL) properties from anodically oxidized porous silicon (PS) have been investigated. Large temperature coefficients (-0.5 meV/K) of PL peak energy are observed for relatively strongly oxidized PS specimens which show saturation of PL peak blue shift upon further anodic oxidation. Time-resolved PL data show that the PL decay is characteristic of thermal activation process with an energy of 9-27 meV at low temperatures between 80 and 180 K. Those results can be explained using a luminescence model which assumes several PL centers in the energy gap and considers thermally activated and tunneling processes.
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Ito, T., Furuta, K., Yoneda, T. et al. Localized Nature of Photoluminescence from Anodically Oxidized Porous Silicon. MRS Online Proceedings Library 358, 477 (1994). https://doi.org/10.1557/PROC-358-477
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DOI: https://doi.org/10.1557/PROC-358-477