Electron Spin Resonance Investigations on Porous Silicon

Abstract

The defect properties of as-etched, annealed and thermally oxidized nano-porous Si as well as self supporting macro-porous silicon layers are studied by electron paramagnetic resonance (EPR), photoluminescence (PL), optically detected magnetic resonance (ODMR), and electron nuclear double resonance (ENDOR). The paramagnetic defects observed are dangling bonds closely related to the Pb-center, the Si/SiO2 interfacial defect. In EPR a minimum defect density of 1016 cm−3 is observed for as-etched material, it reaches a maximum of 8 x 1018 cm−3 for samples annealed around 400°C. We quantitatively correlate the defect density with hydrogen desorption data and luminescence efficiency. In the ODMR experiments the same dangling bond centers are observed on the 1.7 eV luminescence band, but with increased sensitivity in the infra-red emission band at 1.15 eV. Electron nuclear double resonance experiments show that the dangling bonds are not solely bonded to Si neighbors but involve hydrogen and fluorine.

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References

  1. [1]

    see Proceedings of the MRS Fall Meeting, Boston 1992

  2. [2]

    L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)

    CAS  Article  Google Scholar 

  3. [3]

    M.S. Brandt, H.D. Fuchs, M. Stutzmann, J. Weber, and M. Cardona, Solid State Commun. 81, 307 (1992)

    CAS  Article  Google Scholar 

  4. [4]

    M.A. Tischler, R.T. Colins, J.H. Statis, and J.C. Tsang, Appl. Phys. Lett. 60, 6393 (1992)

    Article  Google Scholar 

  5. [5]

    V. Petrova Koch, T. Muschik, A. Kux, B.K. Meyer, F. Koch, and V. Lehmann, Appl. Phys. Lett. 61, 943 (1992)

    CAS  Article  Google Scholar 

  6. [6]

    S.V. Bhat K. Jayaram, D. Victor, S. Muthu, and A.K. Sood, Appl. Phys. Lett. 60, 2116 (1992)

    CAS  Article  Google Scholar 

  7. [7]

    N. Ookubo, H. Ono, Y. Ochiai, Y. Mochizuki, and S. Matsui, Appl. Phys. Lett. 61, 2569 (1992)

    Article  Google Scholar 

  8. [8]

    S.M. Prokes, W.E. Carlos, and V.M. Bermudez, Appl. Phys. Lett. 61, 1447 (1992)

    CAS  Article  Google Scholar 

  9. [9]

    M.S. Brandt and M. Stutzmann, Appl. Phys. Lett. 61, 2569 (1992)

    CAS  Article  Google Scholar 

  10. [10]

    Y. Uchida, N. Koshida, H. Koyama, and Y. Yamamoto, Appl. Phys. Lett. 63, 961 (1993)

    CAS  Article  Google Scholar 

  11. [11]

    H. Yokomichi, H. Takakura, and M. Kondo, Jpn. J. Appl. Phys. 32, L365 (1993)

    CAS  Article  Google Scholar 

  12. [12]

    J.C. Mao, Y.Q. Jia, J.S. Fu, E. Wu, B.R. Zhang, L.Z. Zhang, and G.G. Qin, Appl. Phys. Lett. 62, 1408 (1993)

    CAS  Article  Google Scholar 

  13. [13]

    W.Y. Cheung, S.P. Wong, I.H. Wilson, C.F. Kan, and S.K. Hark, Mat. Res. Symp. Proceed. 283, 155 (1993)

    CAS  Article  Google Scholar 

  14. [14]

    F.C. Rong, J.F. Harvey, E.H. Poindexter, and G.J. Gerardi, Appl. Phys. Lett. 63, 920 (1993)

    CAS  Article  Google Scholar 

  15. [15]

    H.J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, and J. Siejeka Phys. Rev. B 47, 10899 (1993)

    Article  Google Scholar 

  16. [16]

    T.J. McMahon and Y. Xiao, Appl. Phys. Lett. 63, 1657 (1993)

    CAS  Article  Google Scholar 

  17. [17]

    J.S. Fu, J.C. Mao, E. Wu, Y.Q. Jia, B.R. Zhang, L.Z. Zhang, G.G. Qin, G.S. Wui, and Y.H. Zhang, Appl. Phys. Lett. 63, 1830 (1993)

    CAS  Article  Google Scholar 

  18. [18]

    B.K. Meyer, D.M. Hofmann, W. Stadler, Petrova-V. Koch, F. Koch, P. Omling, and P. Emanuelsson, Appl. Phys. Lett. 63, 2120 (1993)

    CAS  Article  Google Scholar 

  19. [19]

    B.K. Meyer, V. Petrova-Koch, T. Muschik, H. Linke, P. Omling, and V. Lehmann, Appl. Phys. Lett. 63, 1930 (1993) and references therein

    CAS  Article  Google Scholar 

  20. [20]

    P.A. Lane, L.S. Swanson, J. Shinar, and S. Chumbley, Mat. Res. Symp. Proceed. 256, 169 (1992)

    CAS  Article  Google Scholar 

  21. [21]

    Y. Mochizuki and M. Mizuta, Mat. Sci. For. 143–147, 1469 (1994)

    Google Scholar 

  22. [22]

    D.M. Hofmann, B.K. Meyer, W. Stadler, A. Kux, V. Petrova-Koch, and F. Koch, Mat. Sci. For. 143–147, 1459 (1994)

    Google Scholar 

  23. [23]

    V. Petrova-Koch, A. Kux, F. Müller, T. Muschik, F. Koch, and V. Lehmann, Mat. Res. Symp. Proc. 256, 41 (1992)

    CAS  Article  Google Scholar 

  24. [24]

    J. Christen, Petrova V. Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, and D. Bimberg, 21th Int. Conf. Physics. Semicond., Beijing (1992), unpubl.

    Google Scholar 

  25. [25]

    W.E. Carlos, Appl. Phys. Lett. 50, 1450 (1987)

    CAS  Article  Google Scholar 

  26. [26]

    K.L. Brower, Phys. Rev. B 33, 4471 (1986) and references therein

    CAS  Article  Google Scholar 

  27. [27]

    R.A. Street, J. Non-Cryst. Solids 77/78, 1 (1985)

    Article  Google Scholar 

  28. [28]

    S.P. Depinna and D.J. Dunstan, Phil. Mag. B 50, 579 (1984)

    CAS  Article  Google Scholar 

  29. [29]

    C. Pickering, M.J. Beale, D.J. Robins, P.J. Pearson, and R. Greef, J. Phys. C 17, 6535 (1984)

    Google Scholar 

  30. [30]

    Y. Mochizuki, M. Mizuta, S. Matsui, and N. Ohkubo, Phys. Rev. B 46, 12353 (1992)

    CAS  Article  Google Scholar 

  31. [31]

    V. Petrova-Koch, T. Muschik, D.I. Kovalev, F. Koch, and V. Lehmann, Mat. Res. Symp. Proc. 283, 178 (1992)

    Article  Google Scholar 

  32. [32]

    D.I. Kovalev, I.D. Yaroshetzkii, T. Muschik, V. Petrova-Koch, and F. Koch, Appl. Phys. Lett. 64, 214 (1994)

    CAS  Article  Google Scholar 

  33. [33]

    X. Chen, D. Uttamchandani, C. Trager-Cowan, and K.P. O’Donell Semicond. Sci. Technol. 8, 92 (1993)

    CAS  Article  Google Scholar 

  34. [34]

    K.M. Lee, L.C. Kimerling, B.G. Bagley, and W.E. Quinn, Solid State Commun. 57, 615 (1986) and references therein

    CAS  Article  Google Scholar 

  35. [35]

    B.K. Meyer, D.M. Hofmann, W. Stadler, V. Petrova-Koch, F. Koch, P. Emanuelsson, and P. Omling, J. Luminescence 57, 130 (1993)

    Article  Google Scholar 

  36. [36]

    B.K. Meyer, A. Nikolov, A. Graber, A. Hofstaetter, and A. Scharmann, unpublished

  37. [37]

    M.S. Brandt and M. Stutzmann, in Porous Silica, ed. by Z.C. Feng and R. Tsu (World Scientific, Singapore, 1994)

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Meyer, B.K., Hofmann, D.M., Christmann, P. et al. Electron Spin Resonance Investigations on Porous Silicon. MRS Online Proceedings Library 358, 453 (1994). https://doi.org/10.1557/PROC-358-453

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