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Stress Relaxation in Al−Si−Cu Thin Films and Lines

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Abstract

Substrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

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References

  1. J. F. Smith and I. Wagner, Advanced Aluminum Metallization. Part I: Aluminum Thin Film Properties, (1991 MRC Thin Film School), 2.

    Google Scholar 

  2. F.M. d’Heurle and P.S. Ho in Thin Films: Interdiffusion and Reactions, ed. by J. Poate, K. Tu and J. Mayer (N.Y.), 293 (1978).

  3. H. Okabayashi, Mat. Sci. Eng. R11 (5), 191–241 (1993).

    Article  Google Scholar 

  4. C.A. Volkert, C.F. Alofs and J.R. Liefting, J. Mater. Res. 9 (5), 1147 (1994).

    Article  CAS  Google Scholar 

  5. W.D. Nix, Metall. Trans A 20A, 3317 (1989).

    Google Scholar 

  6. D.S. Gardner and P.A. Flinn, IEEE Trans, on El. Dev. 35 (12), 2160 (1988).

    Article  CAS  Google Scholar 

  7. H.J. Frost and M.F. Ashby in Deformation Mechanism Maps (Pergamon Press, Oxford, 1982), Chapter 2.

    Google Scholar 

  8. Mechanical behavior of Materials, ed. by F.A. Clintock and A.S. Argon (Addison-Wesley Company, Reading, 1966), 276–281.

    Google Scholar 

  9. Aluminum. Properties and Physical Metallurgy, ed. by J.E. Hatch (ASM, Metal Parks, Ohio), 47 (1984).

    Google Scholar 

  10. G.M. Clarke in Statistics and Experimental Design. 2nd edition (Edward Arnold Ltd.), 104 (1980).

    Google Scholar 

  11. D. Hull and D.J. Bacon, Introduction to Dislocations. 3th edition (Pergamon Press, Oxford, NY), 242 (1984).

    Google Scholar 

  12. T. Hosoda, H. Niwa, H. Yagi and H. Tsuchikawa, Proc. 1991 IRPS (IEEE), 77 (1991).

    Google Scholar 

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    A. Witvrouw, J. Proost, B. Deweerdt, Ph. Roussel & K. Maex

Authors
  1. A. Witvrouw
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  2. J. Proost
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  3. B. Deweerdt
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  4. Ph. Roussel
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  5. K. Maex
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Witvrouw, A., Proost, J., Deweerdt, B. et al. Stress Relaxation in Al−Si−Cu Thin Films and Lines. MRS Online Proceedings Library 356, 441–446 (1994). https://doi.org/10.1557/PROC-356-441

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  • DOI: https://doi.org/10.1557/PROC-356-441

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