Stress Relaxation in Al−Si−Cu Thin Films and Lines

Abstract

Substrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

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Correspondence to A. Witvrouw.

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Witvrouw, A., Proost, J., Deweerdt, B. et al. Stress Relaxation in Al−Si−Cu Thin Films and Lines. MRS Online Proceedings Library 356, 441–446 (1994). https://doi.org/10.1557/PROC-356-441

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