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Measurement of the Dependence of Stress and Strain on Crystallographic Orientation in Cu and Al thin Films

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Abstract

The orientational dependence of stress and strain was measured for (111) and (110) oriented grains in an Al thin film which hillocked upon heating, and (111) and (100) oriented grains in Cu thin films, one of which exhibits abnormal (100) grain growth. Results from the Al thin film were inconclusive in the evaluation of the Sanchez model for hillocking, however they indicate that the Nix model for the orientational dependence of yield stress is not applicable to individual grains at room temperature. Results from the Cu thin films suggest that suppression of (100) abnormal grain growth is due to isostress averaging among the grains of varying orientation.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA

    E. M. Zielinski, R. P. Vinci & J. C. Bravman

Authors
  1. E. M. Zielinski
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  2. R. P. Vinci
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  3. J. C. Bravman
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Zielinski, E.M., Vinci, R.P. & Bravman, J.C. Measurement of the Dependence of Stress and Strain on Crystallographic Orientation in Cu and Al thin Films. MRS Online Proceedings Library 356, 429–434 (1994). https://doi.org/10.1557/PROC-356-429

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  • DOI: https://doi.org/10.1557/PROC-356-429

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