A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE

MRS Online Proceedings Library volume 356, pages319–324(1994)Cite this article

Abstract

Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ~ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ~ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about - 8 × l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of - 4 × l0−3 and large strain relaxation of 50%.

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  1. Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong, P.O. Box 106, Taejon, 305-600, Korea

    Cho-Ik Kyoung, Sahn Nahm, Kim-Gi Sang, Lee-Chang Seung, Kim-Soo Kyung & Park-Chong Sin

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  1. Cho-Ik Kyoung
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  2. Sahn Nahm
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  3. Kim-Gi Sang
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  4. Lee-Chang Seung
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  5. Kim-Soo Kyung
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  6. Park-Chong Sin
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Correspondence to Cho-Ik Kyoung.

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Kyoung, CI., Nahm, S., Sang, KG. et al. A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE. MRS Online Proceedings Library 356, 319–324 (1994). https://doi.org/10.1557/PROC-356-319

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