A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE


Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ~ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ~ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about - 8 × l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of - 4 × l0−3 and large strain relaxation of 50%.

This is a preview of subscription content, access via your institution.


  1. 1.

    C.A. King, J.L. Hoyt, C.M. Gronet, J.F. Gibbons, M.P. Scott, and J. Turner, IEEE ED Lett. 10 (2), 52(1989).

    CAS  Article  Google Scholar 

  2. 2.

    J.C. Bean, Proc. IEEE 80, 571(1992).

    CAS  Article  Google Scholar 

  3. 3.

    S.C. Lee, J.Y. Lee, S.J. Yun, and S.C. Park, presented at the 8th Int’l. Conf. on MBE, Osaka, Japan, 1994.

    Google Scholar 

  4. 4.

    Materials Aspects of GaAs and InP Based Structures, edited by V. Swaminathan and A.T. Macrander (Prentice Hall, New Jersey, 1991), pp. 181–216.

    Google Scholar 

  5. 5.

    D.J. Eaglesham, H.-J. Gossmann, and M. Cerullo, Phys. Rev. Lett. 65, 1227 (1990).

    CAS  Article  Google Scholar 

  6. 6.

    D.L. Smith, C.-C. Chen, G.B. Anderson, and S.B. Hagstrom, Appl. Phys. Lett. 62, 570 (1993).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Cho-Ik Kyoung.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kyoung, CI., Nahm, S., Sang, KG. et al. A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE. MRS Online Proceedings Library 356, 319–324 (1994). https://doi.org/10.1557/PROC-356-319

Download citation