Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ~ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ~ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about - 8 × l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of - 4 × l0−3 and large strain relaxation of 50%.
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Kyoung, CI., Nahm, S., Sang, KG. et al. A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE. MRS Online Proceedings Library 356, 319–324 (1994). https://doi.org/10.1557/PROC-356-319