Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization

Abstract

An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600–800 °C for 30 min. Experimental evidence such as RBS, TEM, XRD measurements shows that the amorphized tungsten nitride layer perfectly blocks the expeditious diffusion of the Cu film due to the amorphous grain boundaries stuffed with N impurities.

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Correspondence to Chul Soon Kwon.

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Kwon, C.S., Kim, D.J., Lee, C.W. et al. Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization. MRS Online Proceedings Library 355, 441–445 (1994). https://doi.org/10.1557/PROC-355-441

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