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Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization

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Abstract

An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600–800 °C for 30 min. Experimental evidence such as RBS, TEM, XRD measurements shows that the amorphized tungsten nitride layer perfectly blocks the expeditious diffusion of the Cu film due to the amorphous grain boundaries stuffed with N impurities.

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Authors and Affiliations

  1. Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea

    Chang Woo Lee

  2. Micro Process Development, Samsung Electronics, 82-3, Dodang-Dong, Wonmi-Ku, Buchun, Kyunggi-Do, 421-130, Korea

    Chul Soon Kwon

  3. Department of Metallurgical Eng., Hanyang Univ., 17, Haengdang-Dong, Sungdong-Ku, Seoul, 133-791, Korea

    Dong Joon Kim

  4. Department of Material Science, Korea Univ., 5-1, Anam-Dong, Sungbuk-Ku, Seoul, 136-701, Korea

    Yong Tae Kim & In-Hoon Choi

Authors
  1. Chul Soon Kwon
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  2. Dong Joon Kim
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  3. Chang Woo Lee
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  4. Yong Tae Kim
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  5. In-Hoon Choi
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Kwon, C.S., Kim, D.J., Lee, C.W. et al. Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization. MRS Online Proceedings Library 355, 441–445 (1994). https://doi.org/10.1557/PROC-355-441

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  • DOI: https://doi.org/10.1557/PROC-355-441

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