Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments

Abstract

The thermal stability of W/Si multilayers (MLs) has been simulated up to 1000°C and 8 hour anneals. The simulation has been carried out with and without the presence of Au overlayers. The results are compared with experimental results by Rutherford Backscattering spectroscopy (RBS). The RBS results also show the presence of excess Ga at the interface.

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Correspondence to Ting Feng.

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Feng, T., Christou, A. Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments. MRS Online Proceedings Library 355, 415–420 (1994). https://doi.org/10.1557/PROC-355-415

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