Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments


The thermal stability of W/Si multilayers (MLs) has been simulated up to 1000°C and 8 hour anneals. The simulation has been carried out with and without the presence of Au overlayers. The results are compared with experimental results by Rutherford Backscattering spectroscopy (RBS). The RBS results also show the presence of excess Ga at the interface.

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  1. 1.

    S. Luby, W.M. Ajkova, P. Lobotka, I. Vavra, M. Jergel, R. Sendevak and J. Grno, Physica C, 197(1992) p35.

    CAS  Article  Google Scholar 

  2. 2.

    D.V. Morgan, H. Thomas, S. McClatchie, A. Christou, B. Marazas, and D.J. Diskett, Phys. Stat. Sol. (a) p 138, K17 (1993).

    Google Scholar 

  3. 3.

    E. Majkova, S. Luby, M. Jergel, R. Senderak, B. George, M. Vaezzadeh, J. Ghanbaja, Thin solid films, 238 (1994) p295.

    CAS  Article  Google Scholar 

  4. 4.

    V. Dupuis, M. F. Ravet, C. Tete, M. Piecuch, and B. Vidal, J. Appl. Phys. 68(7) 1990, p3348.

    CAS  Article  Google Scholar 

  5. 5.

    Z. Jiang, W. Liu, and Z. Wu, J. Appl. Phys. 65, 196 (1989).

    CAS  Article  Google Scholar 

  6. 6.

    K. Suguro, Y. Nakasaki, T. Inoue, S. Shima and M. Kashiwagi, Thin solid films, 166(1988), p114.

    Article  Google Scholar 

  7. 7.

    J.M. Poate, K.N. Tu, and J.W. Mayer, Thin film-interdiffusion and reaction, John Wiley & Sons, 1978.

    Google Scholar 

  8. 8.

    M. Piecuch, Rev. Phys. Appl., 23(1985) p1727.

    Article  Google Scholar 

  9. 9.

    O.B. Loopstra, E.R. van Snek, Th.H. de Keijser, and E.J. Mittemeijer, Phys. Rev b, Vol 44, n 24 (1991), p13519.

    CAS  Article  Google Scholar 

  10. 10.

    H.P. Kattelus, E. Kolawa, K. Affolter, and M.A. Nicolet, J. Vac. Sci. Technol. A3(6), 1985, p2247.

    Google Scholar 

  11. 11.

    W. Dorner, H. Mehrer, P.J. Pokela, E. Kolawa, and M.A. Nicolet, Mat. Sci. & Eng. B, Vol B10, n 2 (1991) P165.

    Article  Google Scholar 

  12. 12.

    K.N. Tu, J.W. Mayer, and L.C. Feldman, Electronic Thin Film Science, Macmillan, New York, 1992.

    Google Scholar 

  13. 13.

    G.V. Samsonov and I.M. Vinifskii, Handbook of Refractory Compounds, New York, M/Plenum, C1980.

    Google Scholar 

  14. 14.

    A. Cros, R. Pierrisnard, F. Pierre, J.M. Layer, and F. Meyer, Appl. Phys. Lett. 55(3), 1989, p226.

    CAS  Article  Google Scholar 

  15. 15.

    B. Cantor and R.W. Calm, in Amorphous Metallic Alloys, edited by F.E. Luborsky, London, 1987.

  16. 16.

    H. Mehrer and W. Dorner, Defect and Diffusion Forum, V 66–69(1989), p189.

    Google Scholar 

  17. 17.

    W.h. Wang, H. Y. Bai, and W.K. Wang, J. Appl. Phys. 74(4), 1993, p2471.

    CAS  Article  Google Scholar 

  18. 18.

    Ju-Hyeon Lee, G.A. Rozgonyi, B.K. Patnaik, D. Knoesen, D. Adams, P. Balducci and A.S.M Salih, J. Appl. Phys. 73(8) 1993, p4023.

    CAS  Article  Google Scholar 

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Feng, T., Christou, A. Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments. MRS Online Proceedings Library 355, 415–420 (1994). https://doi.org/10.1557/PROC-355-415

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