Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

MRS Online Proceedings Library volume 354, pages717–722(1994)Cite this article

Abstract

In order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

This is a preview of subscription content, access via your institution.

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

References

  1. 1.

    I. Miyamoto et al., Energy-Beam Processing of Materials, §4 Ion-Beam Processing, (Oxford Univ. Press, 1989) p. 200.

    Google Scholar 

  2. 2.

    I. Miyamoto and N. Taniguchi, Bull, of the Japan Soc. for Prec. Engg. 13(4), 219 (1979); 16(3), 181 (1982).

    CAS  Google Scholar 

  3. 3.

    Timothy J. Whetten, Angela A. Armstead, Thomas A. Grzybowski, and Arthur L. Ruoff, J. Vac. Sci. Technol. A2(2), 477 (1984).

    Article  Google Scholar 

  4. 4.

    N. N. Efremow, M. W. Geis, D. C. Flanders, G. A. Lincoln, and N. P. Economou, J. Vac. Sci. Technol., B3(1), 416 (1985).

    Article  Google Scholar 

  5. 5.

    G. S. Sandhu and W. K. Chu, Appl. Phys. Lett. 55(5), 437 (1989).

    CAS  Article  Google Scholar 

  6. 6.

    H. R. Kaufman, J. J. Cuomo and J. M. E. Harper, J. Vac. Sci. Technol. 21(3), 725 (1982).

    CAS  Article  Google Scholar 

  7. 7.

    J. M. E. Harper, J. J. Cuomo and H. R. Kaufman, J. Vac. Sci. Technol., 21(3), 737 (1982).

    CAS  Article  Google Scholar 

  8. 8.

    I. Miyamoto and S. Kiyohara, Proceedings from American Soc. for Prec. Engg. 1993 Annual Meeting, 8, 301 (1993).

    Google Scholar 

  9. 9.

    S. Kiyohara and I. Miyamoto, Advancement of Intelligent Production, The Japan Soc. for Prec. Engg. Publication Series No.1, 576 (1994).

    Google Scholar 

  10. 10.

    G. Bining and C. F. Quate, Phys. Rev. Lett. 56(9), 930 (1986).

    Article  Google Scholar 

  11. 11.

    T. R. Albrecht, S. Akamine, T. E. Carver, and C. F. Quate, J. Vac. Sci. Technol. A8(4), 3386 (1990).

    Article  Google Scholar 

Download references

Author information

Affiliations

  1. Department of Applied Electronics, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba, 278, Japan

    Shuji Kiyohara & Iwao Miyamoto

Authors
  1. Shuji Kiyohara
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Iwao Miyamoto
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Shuji Kiyohara.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kiyohara, S., Miyamoto, I. Hydrogen Ion Beam Processing of Single Crystal Diamond Chips. MRS Online Proceedings Library 354, 717–722 (1994). https://doi.org/10.1557/PROC-354-717

Download citation