Planarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (RJ of the diamond films could be considerably reduced from 0.2 μm to 0.05 μm using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above -600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needlelike morphology was observed in the diamond film.
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Lee, DG., Singh, R.K. Ion-Beam Polishing of Diamond Thin Films. MRS Online Proceedings Library 354, 699–703 (1994). https://doi.org/10.1557/PROC-354-699