Skip to main content
SpringerLink
Log in

Si1-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R.A. Soref, J. Appl. Phys. 70 (4), (1991) 2470.

    Article  CAS  Google Scholar 

  2. K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang, F.K. Legoues, Appl. Phys. Lett. 60 (24), (1992), 3033.

    Article  CAS  Google Scholar 

  3. A.R. Powell, K. Eberl, B.A. Ek, S.S. Iyer, J. of Crystal Growth 127 (1993) 425.

    Article  CAS  Google Scholar 

  4. H.J. Osten, E. Bugiel, P. Zaumseil, Appl. Phys. Lett. 64 (25), (1994) 3440.

    Article  CAS  Google Scholar 

  5. J.L. Regolini, S. Bodnar, J.C. Oberlin, F. Ferrieu, M. Gaun, B. Lambert, P. Boucaud, J. Vac. Sol. Technol. A 12 (4), (1994) 1015.

    Article  Google Scholar 

  6. Z. Atzmon, A.E. Bair, E.J. Jaquez, J.W. Mayer, D. Chandrasekhar, D.J. Smith, R.L. Hervig, McD. Robinson, Appl. Phys. Lett. 65 (20), (1994) 2559.

    Article  Google Scholar 

  7. J.W. Strane, H.J. Stein, S.R. Lee, B.L. Doyle, S.T. Picraux, J.W. Mayer, Appl. Phys. Lett. 63 (20), (1993) 2786.

  8. Laser and Electron Beam Processing of Materials, edited by C.W. White and P.S. Peercy (Academic Press, New York, 1980).

    Google Scholar 

  9. A.G. Cullis, R. Series, H.C. Webber, N.G. Chew, Semiconductor Silicon, edited by H.R. Huff, R.J. Kriegler, Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981) p. 518.

    Google Scholar 

  10. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids. Vol. I (Pergamon, Oxford, UK, 1985).

  11. F. Repplinger, E. Fogarassy, A. Grob, J.J. Grob, D. Muller, B. Prévot, J.P. Stoquert and S. de Unamuno, Thin Solid Films 241 (1994) 155.

    Article  CAS  Google Scholar 

  12. J.A. Borders, S.T. Picraux, W. Beezhold, Appl. Phys. Lett. 18 (11), (1971) 509.

    Article  CAS  Google Scholar 

  13. J.C. Tsang, K. Eberl, S. Zollner, S.S. Iyer, Appl. Phys. Lett. 61 (8), (1992) 961.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037, Strasbourg Cedex 2, France

    E. Fogarassy, D. Dentel, J. J. Grob, B. Prévot, J. P. Stoquert & R. Stuck

Authors
  1. E. Fogarassy
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. Dentel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. J. Grob
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. Prévot
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. P. Stoquert
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. Stuck
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Fogarassy, E., Dentel, D., Grob, J.J. et al. Si1-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon. MRS Online Proceedings Library 354, 585–590 (1994). https://doi.org/10.1557/PROC-354-585

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-354-585

Search

Navigation