Si1-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

Abstract

We investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

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Correspondence to E. Fogarassy.

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Fogarassy, E., Dentel, D., Grob, J.J. et al. Si1-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon. MRS Online Proceedings Library 354, 585–590 (1994). https://doi.org/10.1557/PROC-354-585

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