Structural Differences Between Cvd And Thermally Grown Amorphous SiO2

Abstract

The structure and density of amorphous S1O2 films grown by chemical vapor deposition (CVD) or thermal oxidation are studied by Fourier-transform infrared (FT-IR) absorption, neutron diffraction, and Rutherford backscattering (RBS) measurements. CVD oxides, formed in an atmospheric-pressure CVD reactor with a SiH4-O2 gas mixture at 400 °C, are compared with thermal oxides, grown at 980 °C in H2-O2 atmosphere. The average Si-O-Si bond angle deduced from the stretching frequency of FT-IR is found to be smaller in CVD oxides than in thermal oxides, and the density revealed by RBS measurements is found to be a little lower in CVD oxides than in thermal oxides. These differences are explained by the medium-range structural disorder revealed by FT-IR measurements as well as by neutron diffraction measurements. The medium-range structural disorder in CVD oxides is responsible for large silanol content in the oxides and is the origin in difference between CVD and thermal oxides.

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Correspondence to M. Makabe.

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Makabe, M., Hirose, K., Ishikawa, H. et al. Structural Differences Between Cvd And Thermally Grown Amorphous SiO2. MRS Online Proceedings Library 354, 455–460 (1994). https://doi.org/10.1557/PROC-354-455

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