Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope

Abstract

Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn’t represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    K. Ogura and M.M. Kersker, in: Proc. 46th Annual Meeting of the Electron Microscopy Society of America, (San Francisco Press, San Francisco, 1988) p.204

    Google Scholar 

  2. 2.

    K. Ogura, A. Ono, S. Franchi, P.G. Merli and A. Migliori, Proc. of XII th Int. Cong. Elect. Microsc, Vol. 1 (San Francisco Press, San Francisco, 1990) p.404

    Google Scholar 

  3. 3.

    S. Franchi, P.G. Merli, A. Migliori, K. Ogura and A. Ono, Proc. of XII th Int. Cong. Elect. Microsc, Vol. 1 (San Francisco Press, San Francisco, 1990) p.380

    Google Scholar 

  4. 4.

    L. Reimer, Scanning Electron Microscopy, Springer Verlag, 1985

    Google Scholar 

  5. 5.

    P.G. Merli and M. Nacucchi, Ultramicroscopy, 50 (1993) 83.

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to A. Bosacchi.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Bosacchi, A., Franchi, S., Govoni, D. et al. Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope. MRS Online Proceedings Library 354, 443–448 (1994). https://doi.org/10.1557/PROC-354-443

Download citation