Abstract
Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn’t represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.
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Bosacchi, A., Franchi, S., Govoni, D. et al. Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope. MRS Online Proceedings Library 354, 443–448 (1994). https://doi.org/10.1557/PROC-354-443
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DOI: https://doi.org/10.1557/PROC-354-443