ɑ-SiC crystals were implanted with aluminum to a high dose at room temperature or 800°C. Studies by transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline at 800°C. Crystalline aluminum carbide was formed and aluminum redistribution took place in SiC implanted at 800°C. Implanted and unimplanted crystals were oxidized in 1 atm flowing oxygen at 1300°C. Amorphization led to accelerated oxidation of SiC. The oxidation resistance of SiC implanted at 800°C was comparable to that of pure SiC. The oxidation layers formed on SiC implanted at both temperatures consisted of silica embedded with mullite precipitates. The phase formation during implantation and oxidation is consistent with thermodynamic predictions.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
Z. Yang, H. Du, M. Libera, S.P. Withrow, L.M. Casas, and R.T. Lareau, Covalent Ceramics II: NonOxides, edited by A.R. Barron, G.S. Fischman, M.A. Fury, and A.F. Hepp (MRS Symp. Proa, Boston, MA, November, 1993, Materials Research Society, Pittsburgh, PA, 1994), p. 281.
C.S. Yust and C.J. McHargue, J. Am. Ceram. Soc. 67,117 (1984).
P.J. Burnett and T.F. Page, J. Mater. Sei. 19,3524 (1984).
T. Hioki, A. Itoh, M. Ohkubo, S. Noda, H. Doi, J. Kawamoto and O. Kamigaito, J. Mater. Sei., 21, 1328 (1986).
P.J. Burnett and T.F. Page, in Science of Hard Materials, edited by E.A. Almond (Adam Hilger, London, 1986) p. 789.
P.J. Burnett and T.F. Page, Radiat. Effects, 97,283 (1986).
C.J. McHargue, G.C. Farlow, C.W. White, J.M. Williams, B.R. Appleton and H. Naramoto, Mater. Sei. Eng., 69, 123 (1986).
I.L. Singer and J. H. Wandass, Structure-Property Relationships in Surface-Modified Ceramics. Edited by C. J. McHargue (Kluwer Academic Publishers, 1989) p. 199.
H. Du, Z. Yang, M. Libera, D. Jacobson, Y. C. Wang and R. F. Davis, J. Amer. Ceram. Soc. 76, 330 (1993).
H. Du, Final Report (National Science Foundation, 1994).
Ion Beam Profile Code, Version 3.20, Implant Science Corp. 1992.
H.G. Bohn, J.M. Williams, C.J. Mchargue and G.M. Begun, J. Mater. Res. 2, 107 (1987).
C.J. McHargue and J.M. Williams, Nuclear Instru. Methods B80/81 889(1993).
V. Heera, R. Kogler, W. Skorupa and J. Stoemenos, in press.
JANAF Thermochemical Tables, 2nd Ed. Edited by D.R Stull and H. Prophet et al. (U.S. Dept. of Commerce, National Bureau of Standards, Washington DC, 1970).
H. Du, M. Libera, Z. Yang, P.J. Lai, D. Jacobson, Y. C. Wang and R. F. Davis, Appl. Phys. Lett. 62, 423 (1993).
G. Deamaley, Nuclaer Instruments and Methods, 182, 899 (1981).
About this article
Cite this article
Yang, Z., Du, H., Libera, M. et al. Effects of Implantation Temperature on the Structure, Composition and Oxidation Resistance of Sic. MRS Online Proceedings Library 354, 281–286 (1994). https://doi.org/10.1557/PROC-354-281