Ion Beam Synthesis of Silicon Carbide: Infra-Red and RBS Studies

Abstract

We report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm. RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

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Correspondence to L. Simon.

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Simon, L., Mesu, A., Grob, J.J. et al. Ion Beam Synthesis of Silicon Carbide: Infra-Red and RBS Studies. MRS Online Proceedings Library 354, 231–236 (1994). https://doi.org/10.1557/PROC-354-231

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