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keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

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Abstract

Homogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

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Authors and Affiliations

  1. Universität Augsburg, Institut für Physik, D-86135, Augsburg, Germany

    J. K. N. Lindner, A. Frohnwieser, B. Rauschenbach & B. Stritzker

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  1. J. K. N. Lindner
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  2. A. Frohnwieser
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  3. B. Rauschenbach
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  4. B. Stritzker
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Lindner, J.K.N., Frohnwieser, A., Rauschenbach, B. et al. keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon. MRS Online Proceedings Library 354, 171–176 (1994). https://doi.org/10.1557/PROC-354-171

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  • DOI: https://doi.org/10.1557/PROC-354-171

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