Control of charge carrier collection by high-energy boron-implanted layers has been investigated to clarify the validity of buried well structures against soft errors in dynamic random-access memories (DRAMs) by ion-induced-current measurements using high-energy proton microprobes. A finely focused 1.3 MeV proton beam has been used to irradiate normal to n+p diodes with buried layers fabricated by B+ implantation at 160 — 1000 keV and to doses of 1 × 1012 — 1 × 101 ions/cm2, and reverse-biased at 1 to 5 V. The measured current was induced by carriers generated by ion microprobes. The collection of charge carriers induced by microprobe irradiation could be reduced by a buried layer formed by boron implantation. It was found that the rate of charge collection depended not on the depth but on the implantation dose of the buried layer. The carrier collection efficiency of the n+p diode with twin wells (i.e., a retrograde well) was two thirds of that with a conventional well.
This is a preview of subscription content, access via your institution.
We’re sorry, something doesn't seem to be working properly.
Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.
T.C. May and M.H. Woods, IEEE Trans. Electron Devices, ED-26, 2 (1979).
Y. Takemae, T. Ema, M. Nakano, F. Baba, T. Yabu, K. Miyasaka and K. Shirai, International Solid-State Circuits Conference Digest (IEEE), 250 (1985).
H. Sunami, T. Kure, N. Hashimoto, K. Itoh, T. Toyabe and S. Asai, IEEE Electron Device Letters, EDL-4, 90 (1983).
D.S. Yaney, J.T. Nelson and L.L. Vanskike, IEEE Trans. Electron Devices, ED-26, 10 (1979).
S.W. Fu, A.M. Mogsen and T.C. May, IEEE Trans. Electron Devices, ED-32, 49 (1985).
H. Sayama, S. Hara, H. Kimura, Y. Ohno, S. Satoh and M. Takai, Jpn. J. Appl. Phys., 31, 4541 (1992).
K. Arimoto, H. Hidaka, M. Hayashikoshi, M. Asakura, K. Fujishima and T. Yoshihara, European Solid-State Circuits Conference, 21 (1991).
H. Sayama, H. Kimura, Y. Ohno, S. Satoh, K. Sonoda, N. Kotani and M. Takai, Jpn. J. Appl. Phys., 32, 6287 (1993).
M. Aoki, J. Etoh, K. Itoh, S. Kimura, and Y. Kawamoto, IEEE J. Solid-State Circuits, 24, 1206 (1989).
R.H. Pehl, F.S. Goulding, D.A. Landis and M. Lenzlinger, Nucl. Instrum. & Methods, 59, 45 (1968).
J.F. Ziegler, J.P. Biersack, and U. Littmark. The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).
H. Sayama, M. Takai, Y. Yuba, S. Namba, K. Tsukamoto and Y. Akasaka, Appl. Phys. Lett., 61, 1682 (1992).
About this article
Cite this article
Kishimoto, T., Sayama, H., Takai, M. et al. Suppression of Ion-Induced Charge Collection by High-Energy B+-Implanted Layer. MRS Online Proceedings Library 354, 135–140 (1994). https://doi.org/10.1557/PROC-354-135