Grain Boundary Phase Analysis of Silicon Nitride by a Newly Developed 300kV Field-Emission Electron Microscope

MRS Online Proceedings Library volume 346, pages733–738(1994)Cite this article

Abstract

The grain boundary phase of silicon nitride containing additives Y2O3 and Nd2O3 has been studied by means of a newly developed 300kV field emission ATEM. The composition of the two-grain boundary phase of about 1 nm thick is successfully determined. It is then found that the compositions among the grain boundaries are not the same and the additives of Y2O3-Nd2O3 are poor in the two-grain boundary, while they are rich in the triple points.

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Affiliations

  1. National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki, 305, Japan

    Y. Bando, H. Suematsu & M. Mitomo

Authors
  1. Y. Bando
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  2. H. Suematsu
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  3. M. Mitomo
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Correspondence to Y. Bando.

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Bando, Y., Suematsu, H. & Mitomo, M. Grain Boundary Phase Analysis of Silicon Nitride by a Newly Developed 300kV Field-Emission Electron Microscope. MRS Online Proceedings Library 346, 733–738 (1994). https://doi.org/10.1557/PROC-346-733

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