Thickness Dependence of Electrical Transport in Buried CoSi2 Films Fabricated by Ion Beam Synthesis

MRS Online Proceedings Library volume 320, pages209–214(1993)Cite this article

Abstract

We have performed electrical transport measurements on thin epitaxial buried CoSi2 layers in (111) and (100)Si with thicknesses ranging from 11.5 to 110 nm. The resistivity as a function of temperature exhibits metallic behaviour. The increase of residual resistivity with decreasing thickness can be explained by quantum mechanical weak localization effects induced by the interface roughness. This is supported by magnetoresistance measurements which provide long phase coherence lengths of lΦ ≈ 0.75 μm in (111)Si and lΦ ≈ 2.3 μm in (100)Si at 4.2 K.

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Affiliations

  1. Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425, Jülich, Germany

    K. Radermacher, R. Jebasinski, S. Mantl, D. Monroe, A.E. White & K.T. Short

  2. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey, 07974, USA

    D. Monroe, A.E. White & K.T. Short

Authors
  1. K. Radermacher
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  2. R. Jebasinski
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  3. S. Mantl
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  4. D. Monroe
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  5. A.E. White
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  6. K.T. Short
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Correspondence to K. Radermacher.

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Radermacher, K., Jebasinski, R., Mantl, S. et al. Thickness Dependence of Electrical Transport in Buried CoSi2 Films Fabricated by Ion Beam Synthesis. MRS Online Proceedings Library 320, 209–214 (1993). https://doi.org/10.1557/PROC-320-209

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