Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)


The formation of a Si/IrSi3/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0 × 1017 Ir/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

This is a preview of subscription content, access via your institution.


  1. [1]

    Marc Wittmer, Phys. Rev. B42, 5249 (1990).

    Article  Google Scholar 

  2. [2]

    Bor-Yeu Tsaur, M. M. Weeks, R. Trubiano, P. W. Pellegrini, and T.-R. Yew, IEEE Electron Device Lett. 9, 650 (1988).

    CAS  Article  Google Scholar 

  3. [3]

    K. M. Yu, B. Katz, I. C. Wu, and I. G. Brown, Nucl. Instr. Meth. B58, 27 (1991).

    CAS  Article  Google Scholar 

  4. [4]

    T. P. Sjoreen, H.-J. Hinneberg, Proc. Mat. Res. Soc. 279, 243 (1993).

    CAS  Article  Google Scholar 

  5. [5]

    K. T. Short, Alice E. White, D. J. Eaglesham, D. C. Jacobson, and J. M. Poate, Mat. Res. Soc. Proc. 235, 279 (1992).

    CAS  Article  Google Scholar 

  6. [6]

    Alice, E. White, K. T. Short, J. L. Batstone, D. C. Jacobson, J. M. Poate, and K. W. West, Appl. Phys. Lett. 50B, 19 (1987); F. W. Smith and G. Ghidini, J. Electrochem. Soc. 129, 1300 (1982).

    Google Scholar 

  7. [7]

    H.-J. Hinneberg, T. P. Sjoreen and M. F. Chisholm, these proceedings.

  8. [8]

    T. P. Sjoreen and H.-J. Hinneberg, to be published.

  9. [9]

    S. Mantl, Mat. Sci. Reports 8, 1 (1992).

    Article  Google Scholar 

  10. [10]

    E. H. A. Dekempeneer, J. J. M. Ottenheim, D. E. W. Vandenhoudt, C. W. T. Bulle-Lieuwma, and E. G. C. Lathouwers, Nucl. Instr. Meth. B55, 769 (1991).

    CAS  Article  Google Scholar 

  11. [11]

    R. Jebasinski, S. Mantl, and Chr. Dieker, Thin Solid Films 223, 298 (1993).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to H.- J. Hinneberg.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Sjoreen, T., Hinneberg, H.J. Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111). MRS Online Proceedings Library 320, 165–171 (1993).

Download citation