The optical and mechanical properties of silicon surface subjected to thermal, chemical, electromechanical and laser treatment have been studied. A special electroluminescence spectrum of silicon monocrystal with porous layer obtained by means of selective etching has been given. It was shown that radiating of monocrystal and porous silicon by laser irradiation with the energy of (1 ÷ 5)* 105 j/m2 (λ=1,06 μm) allowed to change their microplasticity and microhardness by 20–50%.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
J.R. Pater, Impurity clustering effects on dislocation generation in silicon, (Dislocation in Solids, Discussions of the Faradey Society, 1964, N38, p.201–210).
K.V. Ravi, Dislocation sourses in silicon, (Metallurgical Transactions, 1973, V.4, N3, p.681–689).
The authors express their gratitude to L. Steblenko, E. Robur and V. Obukhovsky for their assistanse in carrying out the experiments of electroluminescence in silicon porous structures.
About this article
Cite this article
Makara, V.A., Vesna, G.V., Rudenko, O.V. et al. Laser-Stimulated Changing of Micromechanical Properties in the Monocrystalline and Porous Silicon. MRS Online Proceedings Library 318, 709–714 (1993). https://doi.org/10.1557/PROC-318-709